Invention Grant
- Patent Title: Flash memory device with programmable logic circuit
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Application No.: US17190575Application Date: 2021-03-03
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Publication No.: US11456047B2Publication Date: 2022-09-27
- Inventor: Huangpeng Zhang , Shiyang Yang , Yu Wang , Huamin Cao , Ting Li , Xu Hou
- Applicant: Yangtze Memory Technologies Co., Ltd.
- Applicant Address: CN Hubei
- Assignee: Yangtze Memory Technologies Co., Ltd.
- Current Assignee: Yangtze Memory Technologies Co., Ltd.
- Current Assignee Address: CN Hubei
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Main IPC: G11C29/42
- IPC: G11C29/42 ; G11C7/20 ; G11C29/44 ; G11C29/00 ; H03K19/17728

Abstract:
Aspects of the disclosure provide a semiconductor memory device. The semiconductor memory device includes a memory cell array and peripheral circuitry coupled with the memory cell array. The memory cell array includes a plurality of memory cells. The peripheral circuitry includes programmable logic circuit that is configured, after the semiconductor memory device is powered on, to perform logic functions.
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