Methods of testing memory devices are disclosed. A method may include reading from a number of memory addresses of a memory array of the memory device and identifying each memory address of the number of addresses as either a pass or a fail. The method may further include storing, for each identified fail, data associated with the identified fail in a buffer of the memory device. Further, the method may include conveying, to a tester external to the memory device, at least some of the data associated with each identified fail without conveying address data associated with each identified pass to the tester. Devices and systems are also disclosed.