发明授权
- 专利标题: Ceramic structure for plasma processing apparatus and manufacturing method thereof
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申请号: US16892427申请日: 2020-06-04
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公开(公告)号: US11456158B2公开(公告)日: 2022-09-27
- 发明人: Joo Hwan Kim
- 申请人: KSM COMPONENT CO., LTD.
- 申请人地址: KR Gimpo-si
- 专利权人: KSM COMPONENT CO., LTD.
- 当前专利权人: KSM COMPONENT CO., LTD.
- 当前专利权人地址: KR Gimpo-si
- 代理机构: Sughrue Mion, PLLC
- 优先权: KR10-2019-0066926 20190605
- 主分类号: H01J37/32
- IPC分类号: H01J37/32 ; H01J9/30 ; C04B35/645 ; H01J9/36
摘要:
A ceramic structure including a first conductive structure embedded therein and a second conductive structure embedded at a different depth from the first conductive structure is disclosed. In the ceramic structure, the first conductive structure and the second conductive structure are electrically connected to each other by an electrically conductive connection member capable of compensating for a vertical shrinkage rate of a ceramic sheet shape while being embedded therein when sintering the ceramic structure.
公开/授权文献
- US1895072A Continuous furnace for metallurgical purposes 公开/授权日:1933-01-24
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