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公开(公告)号:US20250136515A1
公开(公告)日:2025-05-01
申请号:US18888637
申请日:2024-09-18
Applicant: KSM COMPONENT CO., LTD.
Inventor: Yun Ho KIM , Joo Hwan KIM , Hwan Young PARK , Bo Sung KIM , Hyun Taek LEE
IPC: C04B35/103 , C04B35/638 , C04B35/64 , H01L21/687
Abstract: A ceramic susceptor particularly with excellent volumetric resistance at high temperatures and thermal conductivity at room temperature compared to a typical ceramic susceptor and a method for manufacturing the same are disclosed. The ceramic susceptor is characterized by comprising alumina (Al2O3); and aluminum nitride (AlN), and not comprising a secondary phase including an aluminum oxynitride phase (AlON phase).
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公开(公告)号:USD1065275S1
公开(公告)日:2025-03-04
申请号:US29774118
申请日:2021-03-15
Applicant: KSM COMPONENT CO., LTD.
Designer: Joo Hwan Kim
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公开(公告)号:US20240430989A1
公开(公告)日:2024-12-26
申请号:US18703474
申请日:2022-11-16
Applicant: KSM COMPONENT CO., LTD.
Inventor: Yun Ho KIM , Joo Hwan KIM , Hwan Young PARK , Bo Sung KIM
IPC: H05B3/26 , C04B35/581
Abstract: Disclosed is a ceramic heater for a semiconductor manufacturing apparatus, the ceramic heater having volume resistivity especially at high temperature and thermal conductivity at room temperature that are superior to those of a normal ceramic heater for a semiconductor manufacturing apparatus. The ceramic heater for a semiconductor manufacturing apparatus includes a ceramic substrate including a) aluminum nitride (AIN), b) any one or more among magnesium oxide (MgO), alumina (Al2O3) and spinel (MgAl2O4), c) calcium oxide (CaO) and d) titanium dioxide (TiO2); and a resistive heating element.
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公开(公告)号:USD1012997S1
公开(公告)日:2024-01-30
申请号:US29774117
申请日:2021-03-15
Applicant: KSM COMPONENT CO., LTD.
Designer: Joo Hwan Kim
Abstract: FIG. 1 is a perspective view of the overall shape of a ceramic heater showing my new design,
FIG. 2 is a front view thereof,
FIG. 3 is a rear view thereof,
FIG. 4 is a left side view thereof,
FIG. 5 is a right side view thereof,
FIG. 6 is a top plan view thereof; and,
FIG. 7 is a bottom plan view thereof.
The broken lines shown in the drawings illustrate portions form no part of the claimed design.
The product of the present design is made of metal and ceramic material.-
公开(公告)号:US11456158B2
公开(公告)日:2022-09-27
申请号:US16892427
申请日:2020-06-04
Applicant: KSM COMPONENT CO., LTD.
Inventor: Joo Hwan Kim
IPC: H01J37/32 , H01J9/30 , C04B35/645 , H01J9/36
Abstract: A ceramic structure including a first conductive structure embedded therein and a second conductive structure embedded at a different depth from the first conductive structure is disclosed. In the ceramic structure, the first conductive structure and the second conductive structure are electrically connected to each other by an electrically conductive connection member capable of compensating for a vertical shrinkage rate of a ceramic sheet shape while being embedded therein when sintering the ceramic structure.
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公开(公告)号:US20210360748A1
公开(公告)日:2021-11-18
申请号:US17318378
申请日:2021-05-12
Applicant: KSM COMPONENT CO., LTD.
Inventor: Joo Hwan Kim
Abstract: Provided are a plate type heater and a vapor deposition apparatus including the same including: a ceramic plate substrate; a heating wire layer located on the inside or on an upper surface of the ceramic plate substrate; a power supply line; and a bridge located on the heating wire layer and connecting the heating wire and the power supply line, wherein the bridge connects the heating wire and the power supply line by curving a bridge material having a length of 1.2 to 5 times based on the shortest distance between the heating wire and the power supply line.
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公开(公告)号:USD1013750S1
公开(公告)日:2024-02-06
申请号:US29774116
申请日:2021-03-15
Applicant: KSM COMPONENT CO., LTD.
Designer: Joo Hwan Kim
Abstract: FIG. 1 is a perspective view of the overall shape of a ceramic heater showing my new design,
FIG. 2 is a front view thereof,
FIG. 3 is a rear view thereof,
FIG. 4 is a left side view thereof,
FIG. 5 is a right side view thereof,
FIG. 6 is a top plan view thereof; and,
FIG. 7 is a bottom plan view thereof.
The broken lines shown in the drawings illustrate portions form no part of the claimed design.
The product of the present design is made of metal and ceramic material.-
公开(公告)号:USD1012998S1
公开(公告)日:2024-01-30
申请号:US29774120
申请日:2021-03-15
Applicant: KSM COMPONENT CO., LTD.
Designer: Joo Hwan Kim
Abstract: FIG. 1 is a perspective view of the overall shape of a ceramic heater showing my new design,
FIG. 2 is a front view thereof,
FIG. 3 is a rear view thereof,
FIG. 4 is a left side view thereof,
FIG. 5 is a right side view thereof,
FIG. 6 is a top plan view thereof; and,
FIG. 7 is a bottom plan view thereof.
The broken lines shown in the drawings illustrate portions form no part of the claimed design.
The product of the present design is made of metal and ceramic material.-
公开(公告)号:US11251061B2
公开(公告)日:2022-02-15
申请号:US16973112
申请日:2019-10-31
Applicant: KSM COMPONENT CO., LTD. , FLOWSERVE KSM CO., LTD.
Inventor: Yun Ho Kim , Joo Hwan Kim , Ki Ryong Lee
IPC: H01L21/02 , C04B35/111 , H01L21/683 , H01L21/687 , C04B35/645 , C04B35/117
Abstract: Disclosed are: an electrostatic chuck having a high volume resistivity so as to reduce a leakage current, thereby improving the adsorption and desorption response characteristics of a semiconductor wafer; and a manufacturing method therefor. The electrostatic chuck is a sintered body in which an electrode is impregnated so as to fix a semiconductor wafer by electrostatic force, and comprises alumina, a sintering aid, and a rare earth composite oxide comprising two to five different rare earth metals, has adsorption and desorption response characteristics of a semiconductor wafer of two seconds or less, and has a volume resistivity at room temperature of 1.0E+16 Ω·cm to 1.0E+17 Ω·cm.
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公开(公告)号:US20200219747A1
公开(公告)日:2020-07-09
申请号:US16629709
申请日:2018-05-15
Applicant: KSM COMPONENT CO., LTD.
Inventor: Yun Ho KIM , Joo Hwan KIM
IPC: H01L21/683 , C04B35/581 , C04B35/626 , C04B35/645
Abstract: One embodiment of the present invention discloses an electrostatic chuck made of an aluminum nitride sintered body, wherein the aluminum nitride sintered body comprises aluminum nitride and a composite oxide formed along the grain boundaries of the aluminum nitride, wherein the composite oxide comprises at least two kinds of rare earth metals which have a solid-solution relationship with each other, and wherein the composite oxide comprises a collection area having a higher oxygen content than a surrounding area.
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