Ceramic heater
    1.
    外观设计

    公开(公告)号:USD1012997S1

    公开(公告)日:2024-01-30

    申请号:US29774117

    申请日:2021-03-15

    设计人: Joo Hwan Kim

    摘要: FIG. 1 is a perspective view of the overall shape of a ceramic heater showing my new design,
    FIG. 2 is a front view thereof,
    FIG. 3 is a rear view thereof,
    FIG. 4 is a left side view thereof,
    FIG. 5 is a right side view thereof,
    FIG. 6 is a top plan view thereof; and,
    FIG. 7 is a bottom plan view thereof.
    The broken lines shown in the drawings illustrate portions form no part of the claimed design.
    The product of the present design is made of metal and ceramic material.

    Ceramic structure for plasma processing apparatus and manufacturing method thereof

    公开(公告)号:US11456158B2

    公开(公告)日:2022-09-27

    申请号:US16892427

    申请日:2020-06-04

    发明人: Joo Hwan Kim

    摘要: A ceramic structure including a first conductive structure embedded therein and a second conductive structure embedded at a different depth from the first conductive structure is disclosed. In the ceramic structure, the first conductive structure and the second conductive structure are electrically connected to each other by an electrically conductive connection member capable of compensating for a vertical shrinkage rate of a ceramic sheet shape while being embedded therein when sintering the ceramic structure.

    PLATE TYPE HEATER AND MANUFACTURING METHOD THEREOF

    公开(公告)号:US20210360748A1

    公开(公告)日:2021-11-18

    申请号:US17318378

    申请日:2021-05-12

    发明人: Joo Hwan Kim

    摘要: Provided are a plate type heater and a vapor deposition apparatus including the same including: a ceramic plate substrate; a heating wire layer located on the inside or on an upper surface of the ceramic plate substrate; a power supply line; and a bridge located on the heating wire layer and connecting the heating wire and the power supply line, wherein the bridge connects the heating wire and the power supply line by curving a bridge material having a length of 1.2 to 5 times based on the shortest distance between the heating wire and the power supply line.

    Ceramic heater
    4.
    外观设计

    公开(公告)号:USD1013750S1

    公开(公告)日:2024-02-06

    申请号:US29774116

    申请日:2021-03-15

    设计人: Joo Hwan Kim

    摘要: FIG. 1 is a perspective view of the overall shape of a ceramic heater showing my new design,
    FIG. 2 is a front view thereof,
    FIG. 3 is a rear view thereof,
    FIG. 4 is a left side view thereof,
    FIG. 5 is a right side view thereof,
    FIG. 6 is a top plan view thereof; and,
    FIG. 7 is a bottom plan view thereof.
    The broken lines shown in the drawings illustrate portions form no part of the claimed design.
    The product of the present design is made of metal and ceramic material.

    Ceramic heater
    5.
    外观设计

    公开(公告)号:USD1012998S1

    公开(公告)日:2024-01-30

    申请号:US29774120

    申请日:2021-03-15

    设计人: Joo Hwan Kim

    摘要: FIG. 1 is a perspective view of the overall shape of a ceramic heater showing my new design,
    FIG. 2 is a front view thereof,
    FIG. 3 is a rear view thereof,
    FIG. 4 is a left side view thereof,
    FIG. 5 is a right side view thereof,
    FIG. 6 is a top plan view thereof; and,
    FIG. 7 is a bottom plan view thereof.
    The broken lines shown in the drawings illustrate portions form no part of the claimed design.
    The product of the present design is made of metal and ceramic material.

    Electrostatic chuck and manufacturing method therefor

    公开(公告)号:US11251061B2

    公开(公告)日:2022-02-15

    申请号:US16973112

    申请日:2019-10-31

    摘要: Disclosed are: an electrostatic chuck having a high volume resistivity so as to reduce a leakage current, thereby improving the adsorption and desorption response characteristics of a semiconductor wafer; and a manufacturing method therefor. The electrostatic chuck is a sintered body in which an electrode is impregnated so as to fix a semiconductor wafer by electrostatic force, and comprises alumina, a sintering aid, and a rare earth composite oxide comprising two to five different rare earth metals, has adsorption and desorption response characteristics of a semiconductor wafer of two seconds or less, and has a volume resistivity at room temperature of 1.0E+16 Ω·cm to 1.0E+17 Ω·cm.

    Electrostatic chuck
    7.
    发明授权

    公开(公告)号:US11355377B2

    公开(公告)日:2022-06-07

    申请号:US16629709

    申请日:2018-05-15

    摘要: One embodiment of the present invention discloses an electrostatic chuck made of an aluminum nitride sintered body, wherein the aluminum nitride sintered body comprises aluminum nitride and a composite oxide formed along the grain boundaries of the aluminum nitride, wherein the composite oxide comprises at least two kinds of rare earth metals which have a solid-solution relationship with each other, and wherein the composite oxide comprises a collection area having a higher oxygen content than a surrounding area.