Invention Grant
- Patent Title: Methods for variable etch depths
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Application No.: US16871751Application Date: 2020-05-11
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Publication No.: US11456205B2Publication Date: 2022-09-27
- Inventor: Morgan Evans , Joseph C. Olson , Rutger Meyer Timmerman Thijssen , Daniel Distaso , Ryan Boas
- Applicant: Applied Materials, Inc.
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: KDB Firm PLLC
- Main IPC: H01L21/768
- IPC: H01L21/768 ; G03F7/20

Abstract:
Methods of producing grating materials with variable height fins are provided. In one example, a method may include providing a mask layer atop a substrate, the mask layer including a first opening over a first processing area and a second opening over a second processing area. The method may further include etching the substrate to recess the first and second processing areas, forming a grating material over the substrate, and etching the grating material in the first and second processing areas to form a plurality of structures oriented at a non-zero angle with respect to a vertical extending from a top surface of the substrate.
Public/Granted literature
- US20210351069A1 METHODS FOR VARIABLE ETCH DEPTHS Public/Granted day:2021-11-11
Information query
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