METHODS FOR VARIABLE ETCH DEPTHS
    1.
    发明申请

    公开(公告)号:US20210351069A1

    公开(公告)日:2021-11-11

    申请号:US16871751

    申请日:2020-05-11

    Abstract: Methods of producing grating materials with variable height fins are provided. In one example, a method may include providing a mask layer atop a substrate, the mask layer including a first opening over a first processing area and a second opening over a second processing area. The method may further include etching the substrate to recess the first and second processing areas, forming a grating material over the substrate, and etching the grating material in the first and second processing areas to form a plurality of structures oriented at a non-zero angle with respect to a vertical extending from a top surface of the substrate.

    Methods for variable etch depths
    2.
    发明授权

    公开(公告)号:US11456205B2

    公开(公告)日:2022-09-27

    申请号:US16871751

    申请日:2020-05-11

    Abstract: Methods of producing grating materials with variable height fins are provided. In one example, a method may include providing a mask layer atop a substrate, the mask layer including a first opening over a first processing area and a second opening over a second processing area. The method may further include etching the substrate to recess the first and second processing areas, forming a grating material over the substrate, and etching the grating material in the first and second processing areas to form a plurality of structures oriented at a non-zero angle with respect to a vertical extending from a top surface of the substrate.

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