Invention Grant
- Patent Title: Semiconductor device
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Application No.: US16779774Application Date: 2020-02-03
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Publication No.: US11456296B2Publication Date: 2022-09-27
- Inventor: Shunpei Yamazaki , Jun Koyama , Kiyoshi Kato
- Applicant: Semiconductor Energy Laboratory Co., Ltd.
- Applicant Address: JP Atsugi
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Atsugi
- Agency: Fish & Richardson P.C.
- Priority: JP2009-296202 20091225
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L27/105 ; H01L27/11551 ; H01L27/1156 ; H01L27/12 ; H01L27/108 ; H01L29/24 ; H01L29/786 ; G11C13/00 ; H01L27/11 ; H01L49/02

Abstract:
An object of one embodiment of the present invention is to provide a semiconductor device with a novel structure in which stored data can be stored even when power is not supplied in a data storing time and there is no limitation on the number of times of writing. The semiconductor device includes a first transistor which includes a first channel formation region using a semiconductor material other than an oxide semiconductor, a second transistor which includes a second channel formation region using an oxide semiconductor material, and a capacitor. One of a second source electrode and a second drain electrode of the second transistor is electrically connected to one electrode of the capacitor.
Public/Granted literature
- US20200176450A1 SEMICONDUCTOR DEVICE Public/Granted day:2020-06-04
Information query
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