Invention Grant
- Patent Title: Dram and method of making
-
Application No.: US16931154Application Date: 2020-07-16
-
Publication No.: US11456301B2Publication Date: 2022-09-27
- Inventor: Arvind Kumar , Mahendra Pakala , Sanjeev Manhas , Satendra Kumar Gautam
- Applicant: Applied Materials, Inc.
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Patterson + Sheridan, LLP
- Priority: IN201841042056 20181107
- Main IPC: H01L27/108
- IPC: H01L27/108 ; H01L21/28 ; H01L29/49

Abstract:
Embodiments of the present disclosure generally relate to a storage device. More specifically, embodiments described herein generally relate to a dynamic random-access memory and the method of making thereof. In one embodiment, a cell array includes at least an active region and a field region adjacent to the active region. The active region includes at least one trench, a dielectric layer disposed in the trench, a first conformal layer disposed on the dielectric layer, and a conductive material disposed on the first conformal layer. The field region includes a trench, a dielectric layer disposed in the trench, a second conformal layer disposed on the dielectric layer, and a conductive material disposed on the second conformal layer. The second conformal layer has a different composition than the first conformal layer.
Public/Granted literature
- US20200350318A1 DRAM AND METHOD OF MAKING Public/Granted day:2020-11-05
Information query
IPC分类: