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公开(公告)号:US11456301B2
公开(公告)日:2022-09-27
申请号:US16931154
申请日:2020-07-16
Applicant: Applied Materials, Inc.
Inventor: Arvind Kumar , Mahendra Pakala , Sanjeev Manhas , Satendra Kumar Gautam
IPC: H01L27/108 , H01L21/28 , H01L29/49
Abstract: Embodiments of the present disclosure generally relate to a storage device. More specifically, embodiments described herein generally relate to a dynamic random-access memory and the method of making thereof. In one embodiment, a cell array includes at least an active region and a field region adjacent to the active region. The active region includes at least one trench, a dielectric layer disposed in the trench, a first conformal layer disposed on the dielectric layer, and a conductive material disposed on the first conformal layer. The field region includes a trench, a dielectric layer disposed in the trench, a second conformal layer disposed on the dielectric layer, and a conductive material disposed on the second conformal layer. The second conformal layer has a different composition than the first conformal layer.
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公开(公告)号:US10727232B2
公开(公告)日:2020-07-28
申请号:US16243551
申请日:2019-01-09
Applicant: Applied Materials, Inc.
Inventor: Arvind Kumar , Mahendra Pakala , Sanjeev Manhas , Satendra Kumar Gautam
IPC: H01L27/108 , H01L21/28 , H01L29/49
Abstract: Embodiments of the present disclosure generally relate to a storage device. More specifically, embodiments described herein generally relate to a dynamic random-access memory and the method of making thereof. In one embodiment, a cell array includes at least an active region and a field region adjacent to the active region. The active region includes at least one trench, a dielectric layer disposed in the trench, a first conformal layer disposed on the dielectric layer, and a conductive material disposed on the first conformal layer. The field region includes a trench, a dielectric layer disposed in the trench, a second conformal layer disposed on the dielectric layer, and a conductive material disposed on the second conformal layer. The second conformal layer has a different composition than the first conformal layer.
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