Invention Grant
- Patent Title: SiC ingot and method of manufacturing SiC ingot
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Application No.: US16223185Application Date: 2018-12-18
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Publication No.: US11459669B2Publication Date: 2022-10-04
- Inventor: Rimpei Kindaichi , Yohei Fujikawa , Yoshishige Okuno
- Applicant: SHOWA DENKO K.K.
- Applicant Address: JP Tokyo
- Assignee: SHOWA DENKO K.K.
- Current Assignee: SHOWA DENKO K.K.
- Current Assignee Address: JP Tokyo
- Agency: Sughrue Mion, PLLC
- Priority: JPJP2017-246784 20171222
- Main IPC: C30B21/02
- IPC: C30B21/02 ; C30B29/36 ; C30B29/60 ; C30B23/02 ; C30B23/00 ; H01L21/02
Abstract:
A SiC ingot includes a core portion; and a surface layer that is formed on a plane of the core portion in a growing direction, and a coefficient of linear thermal expansion of the surface layer is smaller than a coefficient of linear thermal expansion of the core portion.
Public/Granted literature
- US20190194822A1 SiC INGOT AND METHOD OF MANUFACTURING SiC INGOT Public/Granted day:2019-06-27
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