Invention Grant
- Patent Title: Granular error reporting on multi-pass programming of non-volatile memory
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Application No.: US15733561Application Date: 2019-08-22
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Publication No.: US11461158B2Publication Date: 2022-10-04
- Inventor: Qisong Lin , Vamsi Pavan Rayaprolu , Jiangang Wu , Sampath K. Ratnam , Sivagnanam Parthasarathy , Shao Chun Shi
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Lowenstein Sandler LLP
- International Application: PCT/CN2019/102055 WO 20190822
- International Announcement: WO2021/031205 WO 20210225
- Main IPC: G06F11/00
- IPC: G06F11/00 ; G06F11/07

Abstract:
A system includes a memory component to, upon completion of second pass programming in response to a multi-pass programming command, write flag bits within a group of memory cells programmed by the multi-pass programming command A processing device, operatively coupled to the memory component, is to perform multi-pass programming of the group of memory cells in association with a logical address. Upon receipt of a read request, the processing device is to determine that a second logical address within the read request does not match the logical address associated with data stored at a physical address of the group of memory cells. The processing device is further to determine a number of first values within the plurality of flag bits, and in response to the number of first values not satisfying a threshold criterion, report, to a host computing device, an uncorrectable data error.
Public/Granted literature
- US20210397509A1 GRANULAR ERROR REPORTING ON MULTI-PASS PROGRAMMING OF NON-VOLATILE MEMORY Public/Granted day:2021-12-23
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