- Patent Title: Self-aligned contacts for nanosheet field effect transistor devices
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Application No.: US17110604Application Date: 2020-12-03
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Publication No.: US11462443B2Publication Date: 2022-10-04
- Inventor: Eugenio Dentoni Litta , Juergen Boemmels , Julien Ryckaert , Naoto Horiguchi , Pieter Weckx
- Applicant: IMEC vzw
- Applicant Address: BE Leuven
- Assignee: IMEC vzw
- Current Assignee: IMEC vzw
- Current Assignee Address: BE Leuven
- Agency: Knobbe, Martens, Olson & Bear, LLP
- Priority: EP19215873 20191213
- Main IPC: H01L21/8238
- IPC: H01L21/8238 ; H01L27/092 ; H01L23/528 ; H01L29/06 ; H01L29/423 ; H01L29/417 ; H01L29/786 ; H01L21/02 ; H01L21/762 ; H01L29/66

Abstract:
In one aspect, a method of forming a semiconductor device, can comprise forming a first transistor structure and a second transistor structure separated by a trench. The first and the second transistor structures can comprise a plurality of stacked nanosheets forming a channel structure, and a source portion and a drain portion horizontally separated by the channel structure. A first and a second spacer can beformed in the trench at sidewalls of the transistor structures, both protruding above a top surface of the transistor structures. The method can comprise applying a first mask layer including an opening exposing the first spacer at a first source/drain portion of the first transistor structure and covering the second spacer, partially etching the exposed first spacer through the opening, exposing at least parts of a sidewall of the first source/drain portion of the first transistor structure, and removing the mask layer. The method can further comprise depositing a contact material over the transistor structures and the first and second spacer, filling the trench and contacting the first source/drain portion of the first transistor structure, and etching back the contact material layer below a top surface of the second spacer.
Public/Granted literature
- US20210183711A1 SELF-ALIGNED CONTACTS FOR NANOSHEET FIELD EFFECT TRANSISTOR DEVICES Public/Granted day:2021-06-17
Information query
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