- 专利标题: Open-junction ionic transistor
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申请号: US16887895申请日: 2020-05-29
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公开(公告)号: US11474069B2公开(公告)日: 2022-10-18
- 发明人: Jeong-Yun Sun , Young-Chang Joo , Taek Dong Chung , Hae-Ryung Lee , Seung-Min Lim , Seok Hee Han , Hyunjae Yoo
- 申请人: Seoul National University R&DB Foundation
- 申请人地址: KR Seoul
- 专利权人: Seoul National University R&DB Foundation
- 当前专利权人: Seoul National University R&DB Foundation
- 当前专利权人地址: KR Seoul
- 代理机构: Cantor Colburn LLP
- 优先权: KR10-2019-0064011 20190530
- 主分类号: G01N27/414
- IPC分类号: G01N27/414
摘要:
Disclosed is an open-junction ionic transistor which includes: a substrate; a p type gel which is formed as a polyelectrolyte gel on the substrate; an n type gel which is formed as the polyelectrolyte gel on the substrate and having one side contacting one side of the p type gel; a first reservoir contacting the other side of the p type gel; a second reservoir contacting the other side of the n type gel; and an encapsulation layer covering the p type gel, the n type gel, the first reservoir, and the second reservoir, in which on the encapsulation layer, an injection unit for injecting an ion input is formed at a location corresponding to an interface contacting the p type gel and the n type gel and when reverse bias voltage is applied between the p type gel and the n type gel, the ion input injected through the injection unit is amplified and ionic current peak is generated.
公开/授权文献
- US20200378918A1 OPEN-JUNCTION IONIC TRANSISTOR 公开/授权日:2020-12-03
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