Invention Grant
- Patent Title: Memory module with reduced read/write turnaround overhead
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Application No.: US17228506Application Date: 2021-04-12
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Publication No.: US11474959B2Publication Date: 2022-10-18
- Inventor: Frederick A. Ware , Craig E. Hampel
- Applicant: Rambus Inc.
- Applicant Address: US CA San Jose
- Assignee: Rambus Inc.
- Current Assignee: Rambus Inc.
- Current Assignee Address: US CA San Jose
- Agency: Peninsula Patent Group
- Agent Lance Kreisman
- Main IPC: G06F13/16
- IPC: G06F13/16 ; G11C7/10 ; G11C5/04 ; G11C11/4096 ; G06F13/40 ; G11C11/408 ; G11C11/4093

Abstract:
A memory module includes a substrate, plural memory devices, and a buffer. The plural memory devices are organized into at least one rank, each memory device having plural banks. The buffer includes a primary interface for communicating with a memory controller and a secondary interface coupled to the plural memory devices. For each bank of each rank of memory devices, the buffer includes data buffer circuitry and address buffer circuitry. The data buffer circuitry includes first storage to store write data transferred during a bank cycle interval (tRR). The address buffer circuitry includes second storage to store address information corresponding to the data stored in the first storage.
Public/Granted literature
- US20210318969A1 MEMORY MODULE WITH REDUCED READ/WRITE TURNAROUND OVERHEAD Public/Granted day:2021-10-14
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