- 专利标题: Memory device virtual blocks using half good blocks
-
申请号: US17393886申请日: 2021-08-04
-
公开(公告)号: US11475974B2公开(公告)日: 2022-10-18
- 发明人: Sri Rama Namala , Jung Sheng Hoei , Jianmin Huang , Ashutosh Malshe , Xiangang Luo
- 申请人: Micron Technology, Inc.
- 申请人地址: US ID Boise
- 专利权人: Micron Technology, Inc.
- 当前专利权人: Micron Technology, Inc.
- 当前专利权人地址: US ID Boise
- 代理机构: Schwegman Lundberg & Woessner, P.A.
- 主分类号: G11C29/18
- IPC分类号: G11C29/18 ; G11C29/44 ; G11C29/40
摘要:
Disclosed in some examples are methods, systems, devices, memory devices, and machine-readable mediums for using a non-defective portion of a block of memory on which there is a defect on a different portion. Rather than disable the entire block, the system may disable only a portion of the block (e.g., a first deck of the block) and salvage a different portion of the block (e.g., a second deck of the block).
公开/授权文献
- US20220199189A1 MEMORY DEVICE VIRTUAL BLOCKS USING HALF GOOD BLOCKS 公开/授权日:2022-06-23
信息查询