Invention Grant
- Patent Title: Jointing material, fabrication method for semiconductor device using the jointing material, and semiconductor device
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Application No.: US16196785Application Date: 2018-11-20
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Publication No.: US11476399B2Publication Date: 2022-10-18
- Inventor: Hidetoshi Kitaura , Akio Furusawa , Kiyohiro Hine
- Applicant: Panasonic Intellectual Property Management Co., Ltd.
- Applicant Address: JP Osaka
- Assignee: Panasonic Intellectual Property Management Co., Ltd.
- Current Assignee: Panasonic Intellectual Property Management Co., Ltd.
- Current Assignee Address: JP Osaka
- Agency: Wenderoth, Lind & Ponack, L.L.P.
- Priority: JPJP2017-229234 20171129,JPJP2018-144143 20180731
- Main IPC: H01L33/64
- IPC: H01L33/64 ; H01L33/00 ; H01L23/00 ; B23K35/26
Abstract:
A jointing material includes: at least one type of element at 0.1 wt % to 30 wt %, the element being capable of forming a compound with each of tin and carbon; and tin at 70 wt % to 99.9 wt % as a main component.
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