- 专利标题: Semiconductor device drive circuit
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申请号: US17474726申请日: 2021-09-14
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公开(公告)号: US11476847B2公开(公告)日: 2022-10-18
- 发明人: Jun Fukudome , Kazuya Hokazono , Mitsutaka Hano
- 申请人: Mitsubishi Electric Corporation
- 申请人地址: JP Tokyo
- 专利权人: Mitsubishi Electric Corporation
- 当前专利权人: Mitsubishi Electric Corporation
- 当前专利权人地址: JP Tokyo
- 代理机构: Studebaker & Brackett PC
- 优先权: JPJP2020-207477 20201215
- 主分类号: H03K3/00
- IPC分类号: H03K3/00 ; H03K3/037 ; H03K17/06 ; H03K17/16 ; H02M1/08 ; H03K17/687 ; H03K19/0185 ; H03K19/0944
摘要:
An object of the present disclosure is to provide a semiconductor device drive circuit stably preventing an erroneous operation in accordance with an application of dV/dt. A semiconductor device drive circuit includes: pulse transmission circuits outputting an on-pulse transmission signal and an off-pulse transmission signal based on a level shift on-pulse signal and a level shift off-pulse signal; a dV/dt detection circuit detecting a dV/dt period based on the level shift on-pulse signal and the level shift off-pulse signal; a logic filter circuit which does not change outputs when both the on-pulse transmission signal and the off-pulse transmission signal are input; and a latch circuit outputting a signal synchronized with an output of the logic filter circuit. The pulse transmission circuit includes impedance adjusting parts reducing a signal level of the on-pulse transmission signal and the off-pulse transmission signal during the dV/dt period.
公开/授权文献
- US20220190823A1 SEMICONDUCTOR DEVICE DRIVE CIRCUIT 公开/授权日:2022-06-16
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