Invention Grant
- Patent Title: Chemical solution and method for treating substrate
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Application No.: US17183449Application Date: 2021-02-24
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Publication No.: US11479863B2Publication Date: 2022-10-25
- Inventor: Nobuaki Sugimura , Tomonori Takahashi , Hiroyuki Seki
- Applicant: FUJIFILM Corporation
- Applicant Address: JP Tokyo
- Assignee: FUJIFILM Corporation
- Current Assignee: FUJIFILM Corporation
- Current Assignee Address: JP Tokyo
- Agency: Sughrue Mion, PLLC
- Priority: JPJP2018-170838 20180912
- Main IPC: C23F1/26
- IPC: C23F1/26

Abstract:
The present invention provides a chemical solution having excellent storage stability and excellent defect inhibition performance. The present invention also provides a method for treating a substrate. The chemical solution according to an embodiment of the present invention is a chemical solution used for removing a transition metal-containing substance on a substrate. The chemical solution contains one or more kinds of halogen oxoacids selected from the group consisting of a halogen oxoacid and a salt thereof and one or more kinds of specific anions selected from the group consisting of SO42−, NO3−, PO43−, and BO33−. In a case where the chemical solution contains one kind of the specific anion, a content of one kind of the specific anion is 5 ppb by mass to 1% by mass with respect to a total mass of the chemical solution. In a case where the chemical solution contains two or more kinds of the specific anions, a content of each of two or more kinds of the specific anions is equal to or lower than 1% by mass with respect to the total mass of the chemical solution, and a content of at least one of two or more kinds of the specific anions is equal to or higher than 5 ppb by mass with respect to the total mass of the chemical solution.
Public/Granted literature
- US20210180192A1 CHEMICAL SOLUTION AND METHOD FOR TREATING SUBSTRATE Public/Granted day:2021-06-17
Information query
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