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1.发明授权公开(公告)号：US11732190B2
公开(公告)日：2023-08-22
申请号：US16940515
申请日：2020-07-28
申请人： FUJIFILM Corporation
IPC分类号： C09K13/04 , H01L21/02 , H01L21/3213
CPC分类号： C09K13/04 , H01L21/02071 , H01L21/32134
摘要： The present invention provides a chemical solution, which demonstrates excellent etching performance for transition metal-containing substances and has excellent defect inhibition performance, a method for manufacturing the chemical solution, and a method for treating a substrate. The chemical solution according to an embodiment of the present invention includes one or more kinds of periodic acids selected from the group consisting of a periodic acid and a salt thereof, one or more kinds of first metal components selected from the group consisting of Ti and Zr, and water. In a case where the chemical solution includes one kind of first metal component, a content of the one kind of first metal component is 1 ppt by mass to 100 ppm by mass with respect to a total mass of the periodic acids. In a case where the chemical solution includes two kinds of first metal components, a content of both the two kinds of first metal components is equal to or smaller than 100 ppm by mass with respect to the total mass of the periodic acids, and a content of at least one of the two kinds of first metal components is equal to or greater than 1 ppt by mass with respect to the total mass of the periodic acids.
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公开(公告)号：US20230279294A1
公开(公告)日：2023-09-07
申请号：US18177304
申请日：2023-03-02
申请人： FUJIFILM Corporation
发明人： Moe Narita , Nobuaki Sugimura
IPC分类号： C09K13/06 , C23F1/26 , C23F1/28 , H01L21/3213
CPC分类号： C09K13/06 , C23F1/26 , C23F1/28 , H01L21/32134
摘要： Objects of the present invention are to provide a composition having excellent dissolving ability for a transition metal-containing substance (particularly, a Ru-containing substance) and to provide a method for treating a substrate. The composition according to an embodiment of the present invention contains at least one iodic acid compound selected from the group consisting of periodic acid, iodic acid, and salts thereof, and a compound represented by Formula (1).
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公开(公告)号：US11505743B2
公开(公告)日：2022-11-22
申请号：US17192391
申请日：2021-03-04
申请人： FUJIFILM Corporation
IPC分类号： C09K13/06 , H01L21/3213
摘要： The present invention provides a chemical solution which has an excellent dissolving ability for a transition metal-containing substance and can realize excellent smoothness of a portion to be treated. Furthermore, the present invention provides a method of treating a substrate.
The chemical solution according to an embodiment of the present invention is used for removing a transition metal-containing substance on a substrate. The chemical solution contains one or more kinds of specific hypochlorous acids selected from the group consisting of hypochlorous acid and a salt thereof and contains one or more kinds of specific anions selected from the group consisting of ClO3− and Cl−. In a case where the chemical solution contains one kind of the specific anion, the content of one kind of the specific anion is 5 ppb by mass to 1% by mass with respect to a total mass of the chemical solution. In a case where the chemical solution contains two kinds of the specific anions, a content of each of two kinds of the specific anions is equal to or lower than 1% by mass with respect to the total mass of the chemical solution, and a content of at least one of two kinds of the specific anions is equal to or higher than 5 ppb by mass with respect to the total mass of the chemical solution.-
公开(公告)号：US11479863B2
公开(公告)日：2022-10-25
申请号：US17183449
申请日：2021-02-24
申请人： FUJIFILM Corporation
IPC分类号： C23F1/26
摘要： The present invention provides a chemical solution having excellent storage stability and excellent defect inhibition performance. The present invention also provides a method for treating a substrate. The chemical solution according to an embodiment of the present invention is a chemical solution used for removing a transition metal-containing substance on a substrate. The chemical solution contains one or more kinds of halogen oxoacids selected from the group consisting of a halogen oxoacid and a salt thereof and one or more kinds of specific anions selected from the group consisting of SO42−, NO3−, PO43−, and BO33−. In a case where the chemical solution contains one kind of the specific anion, a content of one kind of the specific anion is 5 ppb by mass to 1% by mass with respect to a total mass of the chemical solution. In a case where the chemical solution contains two or more kinds of the specific anions, a content of each of two or more kinds of the specific anions is equal to or lower than 1% by mass with respect to the total mass of the chemical solution, and a content of at least one of two or more kinds of the specific anions is equal to or higher than 5 ppb by mass with respect to the total mass of the chemical solution.
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公开(公告)号：US11274250B2
公开(公告)日：2022-03-15
申请号：US16924800
申请日：2020-07-09
申请人： FUJIFILM Corporation
IPC分类号： C09K13/06 , H01L21/02 , H01L21/3213
摘要： The present invention provides a chemical solution, which has an excellent dissolving ability for a transition metal-containing substance and can realize excellent smoothness of a portion to be treated, and a treatment method using the chemical solution. The chemical solution according to an embodiment of the present invention is a chemical solution used for removing a transition metal-containing substance on a substrate and includes periodic acids and a compound including one or more kinds of anions selected from the group consisting of IO3−, I−, and I3−, in which a content of the compound including anions with respect to a total mass of the chemical solution is 5 ppb by mass to 1% by mass.
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公开(公告)号：US20200347299A1
公开(公告)日：2020-11-05
申请号：US16924800
申请日：2020-07-09
申请人： FUJIFILM Corporation
IPC分类号： C09K13/06 , H01L21/3213 , H01L21/02
摘要： The present invention provides a chemical solution, which has an excellent dissolving ability for a transition metal-containing substance and can realize excellent smoothness of a portion to be treated, and a treatment method using the chemical solution. The chemical solution according to an embodiment of the present invention is a chemical solution used for removing a transition metal-containing substance on a substrate and includes periodic acids and a compound including one or more kinds of anions selected from the group consisting of IO3−, I−, and I3−, in which a content of the compound including anions with respect to a total mass of the chemical solution is 5 ppb by mass to 1% by mass.
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公开(公告)号：US11466209B2
公开(公告)日：2022-10-11
申请号：US17192391
申请日：2021-03-04
申请人： FUJIFILM Corporation
IPC分类号： C09K13/06 , H01L21/3213
摘要： The present invention provides a chemical solution which has an excellent dissolving ability for a transition metal-containing substance and can realize excellent smoothness of a portion to be treated. Furthermore, the present invention provides a method of treating a substrate.
The chemical solution according to an embodiment of the present invention is used for removing a transition metal-containing substance on a substrate. The chemical solution contains one or more kinds of specific hypochlorous acids selected from the group consisting of hypochlorous acid and a salt thereof and contains one or more kinds of specific anions selected from the group consisting of ClO3− and Cl−. In a case where the chemical solution contains one kind of the specific anion, the content of one kind of the specific anion is 5 ppb by mass to 1% by mass with respect to a total mass of the chemical solution. In a case where the chemical solution contains two kinds of the specific anions, a content of each of two kinds of the specific anions is equal to or lower than 1% by mass with respect to the total mass of the chemical solution, and a content of at least one of two kinds of the specific anions is equal to or higher than 5 ppb by mass with respect to the total mass of the chemical solution.-
公开(公告)号：US11239093B2
公开(公告)日：2022-02-01
申请号：US16939163
申请日：2020-07-27
申请人： FUJIFILM Corporation
IPC分类号： H01L21/321 , H01L21/3213 , C09K13/04 , C09K13/12 , H01L21/02
摘要： The present invention provides a method for treating a substrate, which can remove transition metal-containing substances on a substrate with high efficiency while inhibiting cerium from remaining on the surface of the treated substrate. Furthermore, the present invention provides a method for manufacturing a semiconductor device including the method for treating a substrate, and a kit for treating a substrate that is applicable to the method for treating a substrate. The method for treating a substrate according to an embodiment of the present invention includes a step A of removing a transition metal-containing substance on a substrate by using a chemical solution, which includes a cerium compound and one or more pH adjusters selected from the group consisting of nitric acid, perchloric acid, ammonia, and sulfuric acid, for the substrate having the transition metal-containing substance, and a step B of performing a rinsing treatment on the substrate obtained by the step A by using one or more rinsing solutions selected from the group consisting of a solution including hydrogen peroxide and an acidic aqueous solution which is other than hydrofluoric acid, nitric acid, an aqueous perchloric acid solution, an aqueous oxalic acid solution, and a mixed aqueous solution of these and does not include hydrogen peroxide after the step A.
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