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公开(公告)号：US11072767B2
公开(公告)日：2021-07-27
申请号：US16774220
申请日：2020-01-28
申请人： FUJIFILM Corporation
摘要： A treatment liquid for a semiconductor device is a treatment liquid including water, an organic solvent, and two or more nitrogen-containing aromatic heterocyclic compounds.
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公开(公告)号：US11466209B2
公开(公告)日：2022-10-11
申请号：US17192391
申请日：2021-03-04
申请人： FUJIFILM Corporation
IPC分类号： C09K13/06 , H01L21/3213
摘要： The present invention provides a chemical solution which has an excellent dissolving ability for a transition metal-containing substance and can realize excellent smoothness of a portion to be treated. Furthermore, the present invention provides a method of treating a substrate.
The chemical solution according to an embodiment of the present invention is used for removing a transition metal-containing substance on a substrate. The chemical solution contains one or more kinds of specific hypochlorous acids selected from the group consisting of hypochlorous acid and a salt thereof and contains one or more kinds of specific anions selected from the group consisting of ClO3− and Cl−. In a case where the chemical solution contains one kind of the specific anion, the content of one kind of the specific anion is 5 ppb by mass to 1% by mass with respect to a total mass of the chemical solution. In a case where the chemical solution contains two kinds of the specific anions, a content of each of two kinds of the specific anions is equal to or lower than 1% by mass with respect to the total mass of the chemical solution, and a content of at least one of two kinds of the specific anions is equal to or higher than 5 ppb by mass with respect to the total mass of the chemical solution.-
公开(公告)号：US11239093B2
公开(公告)日：2022-02-01
申请号：US16939163
申请日：2020-07-27
申请人： FUJIFILM Corporation
IPC分类号： H01L21/321 , H01L21/3213 , C09K13/04 , C09K13/12 , H01L21/02
摘要： The present invention provides a method for treating a substrate, which can remove transition metal-containing substances on a substrate with high efficiency while inhibiting cerium from remaining on the surface of the treated substrate. Furthermore, the present invention provides a method for manufacturing a semiconductor device including the method for treating a substrate, and a kit for treating a substrate that is applicable to the method for treating a substrate. The method for treating a substrate according to an embodiment of the present invention includes a step A of removing a transition metal-containing substance on a substrate by using a chemical solution, which includes a cerium compound and one or more pH adjusters selected from the group consisting of nitric acid, perchloric acid, ammonia, and sulfuric acid, for the substrate having the transition metal-containing substance, and a step B of performing a rinsing treatment on the substrate obtained by the step A by using one or more rinsing solutions selected from the group consisting of a solution including hydrogen peroxide and an acidic aqueous solution which is other than hydrofluoric acid, nitric acid, an aqueous perchloric acid solution, an aqueous oxalic acid solution, and a mixed aqueous solution of these and does not include hydrogen peroxide after the step A.
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公开(公告)号：US11225633B2
公开(公告)日：2022-01-18
申请号：US16180107
申请日：2018-11-05
申请人： FUJIFILM Corporation
IPC分类号： C11D17/08 , C11D7/08 , C23G1/06 , C11D7/28 , C11D7/50 , C23G1/10 , C11D7/02 , C11D3/00 , H01L21/02 , C23G1/08 , H01L21/311 , C23F1/28 , G03F7/42 , C11D11/00 , C11D7/10 , H01L21/304 , C23F1/26 , H01L21/308
摘要： A treatment liquid is a treatment liquid for a semiconductor device, containing a fluorine-containing compound, a corrosion inhibitor, and calcium, in which the mass content ratio of the calcium to the fluorine-containing compound in the treatment liquid is 1.0×10−10 to 1.0×10−4.
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公开(公告)号：US08889025B2
公开(公告)日：2014-11-18
申请号：US14146142
申请日：2014-01-02
发明人： Tomonori Takahashi , Tadashi Inaba , Atsushi Mizutani , Bing Du , William A. Wojtczak , Kazutaka Takahashi , Tetsuya Kamimura
IPC分类号： C03C15/00 , H01L21/3213 , C09K13/06 , C23F1/16 , C23F1/30 , H01L21/285 , H01L21/768
CPC分类号： H01L21/32134 , C09K13/06 , C23F1/16 , C23F1/28 , C23F1/30 , C23F1/44 , H01L21/28518 , H01L21/76843
摘要： This disclosure relates to a method for manufacturing a semiconductor device. The method includes etching a metal film on a semiconductor substrate with an etching composition; and rinsing the etched metal film with a rinse solvent. The etching composition includes at least one acid; at least one compound containing a halide anion, the halide anion being chloride or bromide; at least one compound containing a nitrate or nitrosyl ion; and water.
摘要翻译： 本公开涉及一种用于制造半导体器件的方法。 该方法包括用蚀刻组合物蚀刻半导体衬底上的金属膜; 并用冲洗溶剂冲洗蚀刻的金属膜。 蚀刻组合物包含至少一种酸; 至少一种含卤化物阴离子的化合物，卤化物阴离子是氯化物或溴化物; 至少一种含有硝酸根或亚硝酰离子的化合物; 和水。
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公开(公告)号：US11479863B2
公开(公告)日：2022-10-25
申请号：US17183449
申请日：2021-02-24
申请人： FUJIFILM Corporation
IPC分类号： C23F1/26
摘要： The present invention provides a chemical solution having excellent storage stability and excellent defect inhibition performance. The present invention also provides a method for treating a substrate. The chemical solution according to an embodiment of the present invention is a chemical solution used for removing a transition metal-containing substance on a substrate. The chemical solution contains one or more kinds of halogen oxoacids selected from the group consisting of a halogen oxoacid and a salt thereof and one or more kinds of specific anions selected from the group consisting of SO42−, NO3−, PO43−, and BO33−. In a case where the chemical solution contains one kind of the specific anion, a content of one kind of the specific anion is 5 ppb by mass to 1% by mass with respect to a total mass of the chemical solution. In a case where the chemical solution contains two or more kinds of the specific anions, a content of each of two or more kinds of the specific anions is equal to or lower than 1% by mass with respect to the total mass of the chemical solution, and a content of at least one of two or more kinds of the specific anions is equal to or higher than 5 ppb by mass with respect to the total mass of the chemical solution.
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公开(公告)号：US11274250B2
公开(公告)日：2022-03-15
申请号：US16924800
申请日：2020-07-09
申请人： FUJIFILM Corporation
IPC分类号： C09K13/06 , H01L21/02 , H01L21/3213
摘要： The present invention provides a chemical solution, which has an excellent dissolving ability for a transition metal-containing substance and can realize excellent smoothness of a portion to be treated, and a treatment method using the chemical solution. The chemical solution according to an embodiment of the present invention is a chemical solution used for removing a transition metal-containing substance on a substrate and includes periodic acids and a compound including one or more kinds of anions selected from the group consisting of IO3−, I−, and I3−, in which a content of the compound including anions with respect to a total mass of the chemical solution is 5 ppb by mass to 1% by mass.
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公开(公告)号：US09726978B2
公开(公告)日：2017-08-08
申请号：US14717437
申请日：2015-05-20
申请人： FUJIFILM Corporation
发明人： Tomonori Takahashi , Kazutaka Takahashi , Atsushi Mizutani , Hiroyuki Seki , Hideo Fushimi , Tomoo Kato
IPC分类号： G03F7/42 , C11D7/08 , C11D7/50 , C11D11/00 , C09K13/00 , C09K13/06 , C11D7/26 , C11D7/32 , C11D7/34 , H01L21/02 , H01L21/311 , H01L21/3213
CPC分类号： G03F7/425 , C09K13/00 , C09K13/06 , C11D7/08 , C11D7/265 , C11D7/3209 , C11D7/3245 , C11D7/34 , C11D7/5013 , C11D11/0047 , G03F7/422 , G03F7/423 , H01L21/02052 , H01L21/02057 , H01L21/02063 , H01L21/02068 , H01L21/02071 , H01L21/31133 , H01L21/32134 , H01L21/32136 , H01L21/32138 , H01L21/32139
摘要： A cleaning composition for removing plasma etching residue and/or ashing residue formed above a semiconductor substrate is provided that includes (component a) water, (component b) a hydroxylamine and/or a salt thereof, (component c) a basic organic compound, and (component d) an organic acid and has a pH of 7 to 9. There are also provided a cleaning process and a process for producing semiconductor device employing the cleaning composition.
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公开(公告)号：US08709277B2
公开(公告)日：2014-04-29
申请号：US13827861
申请日：2013-03-14
IPC分类号： C09K13/00
CPC分类号： C23F1/28 , C23F1/20 , C23F1/26 , C23F1/30 , H01L21/30604 , H01L21/32134 , H01L21/823871
摘要： This disclosure relates to an etching composition containing about 60% to about 95% of at least one sulfonic acid; about 0.005% to about 0.04% of chloride anion; about 0.03% to about 0.27% of bromide anion; about 0.1% to about 20% of nitrate or nitrosyl ion; and about 3% to about 37% of water.
摘要翻译： 本公开涉及含有约60％至约95％的至少一种磺酸的蚀刻组合物; 约0.005％至约0.04％的氯化物阴离子; 约0.03％至约0.27％的溴离子; 约0.1％至约20％的硝酸盐或亚硝酰离子; 和约3％至约37％的水。
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公开(公告)号：US20220260919A1
公开(公告)日：2022-08-18
申请号：US17738699
申请日：2022-05-06
申请人： FUJIFILM Corporation
IPC分类号： G03F7/42 , C11D11/00 , C11D7/50 , C11D7/32 , C11D7/34 , C11D7/26 , H01L21/02 , C11D3/00 , C11D7/04 , C11D7/20
摘要： A treatment liquid for a semiconductor device includes an alkanolamine; a hydroxylamine; an organic solvent; Ca; Fe; and Na, wherein the content of the alkanolamine in the treatment liquid is 0.1% to 5% by mass, the content of the hydroxylamine in the treatment liquid is 0.1% to 30% by mass, and each of the mass ratio of Ca, Fe, and Na with respect to the content of the alkanolamine and the hydroxylamine in the treatment liquid is 10−12 to 10−4.
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