Invention Grant
- Patent Title: Method for accessing semiconductor memory module
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Application No.: US17105821Application Date: 2020-11-27
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Publication No.: US11487613B2Publication Date: 2022-11-01
- Inventor: Wonjae Shin , Nam Hyung Kim , Dae-Jeong Kim , Do-Han Kim , Minsu Kim , Deokho Seo , Yongjun Yu , Changmin Lee , Insu Choi
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si
- Agency: Volentine, Whitt & Francos, PLLC
- Priority: KR10-2020-0063537 20200527
- Main IPC: G11C29/00
- IPC: G11C29/00 ; G06F11/10 ; G06F11/16 ; G06F11/30

Abstract:
A method for accessing a memory module includes; encoding first data of a first partial burst length to generate first parities and first cyclic redundancy codes, encoding second data of a second partial burst length to generate second parities and second cyclic redundancy codes, writing the first data and the second data to first memory devices, and writing the first parities, the first cyclic redundancy codes, the second parities, and the second cyclic redundancy codes to a second memory device and a third memory device.
Public/Granted literature
- US20210373995A1 METHOD FOR ACCESSING SEMICONDUCTOR MEMORY MODULE Public/Granted day:2021-12-02
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