A method for programming three page user data in a memory array of a non-volatile memory system, comprising converting each three-bit value data pattern of the user data into a representative pair of two-bit data values, simultaneously programming two single-state memory cells with a first of the pair of representative two-bit data values, wherein the two single-state memory cells are located along a first common word line of two memory cell strings, and simultaneously programming two single-state memory cells with a second of the pair of representative two-bit data values, wherein the two single-state memory cells are located along a second common word line of the two memory cell strings.