Invention Grant
- Patent Title: Plasma processing apparatus, calculation method, and calculation program
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Application No.: US16698079Application Date: 2019-11-27
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Publication No.: US11488808B2Publication Date: 2022-11-01
- Inventor: Shinsuke Oka
- Applicant: TOKYO ELECTRON LIMITED
- Applicant Address: JP Tokyo
- Assignee: TOKYO ELECTRON LIMITED
- Current Assignee: TOKYO ELECTRON LIMITED
- Current Assignee Address: JP Tokyo
- Agency: Weihrouch IP
- Priority: JPJP2018-224397 20181130,JPJP2019-100516 20190529
- Main IPC: H01J37/32
- IPC: H01J37/32 ; H01L21/67

Abstract:
In a plasma processing apparatus, a mounting table includes a heater for adjusting a temperature of a mounting surface mounting thereon a consumable part consumed by plasma processing. A heater control unit controls a supply power to the heater such that the heater reaches a setting temperature. A measurement unit measures, while controlling the supply power to the heater such that the temperature of the heater becomes constant, the supply powers in a non-ignition state where plasma is not ignited and in a transient state where the supply power is decreased after the plasma is ignited. A parameter calculation unit calculates a thickness of the consumable part by performing fitting with a calculation model, which has the thickness of the consumable part as a parameter and calculates the supply power in the transient state, by using the measured supply powers in the non-ignition state and in the transient state.
Public/Granted literature
- US20200176228A1 PLASMA PROCESSING APPARATUS, CALCULATION METHOD, AND CALCULATION PROGRAM Public/Granted day:2020-06-04
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