- 专利标题： Method of making semiconductor device package including conformal metal cap contacting each semiconductor die
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申请号： US16705334申请日： 2019-12-06
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公开(公告)号： US11488842B2公开(公告)日： 2022-11-01
- 发明人: Chen-Yu Tsai , Tsung-Shang Wei , Yu-Sheng Lin , Wen-Chih Chiou , Shin-Puu Jeng
- 申请人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 申请人地址： TW Hsinchu
- 专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址： TW Hsinchu
- 代理机构： Slater Matsil, LLP
- 主分类号： H01L21/56
- IPC分类号： H01L21/56 ; H01L25/065 ; H01L25/00 ; H01L23/60 ; H01L21/48 ; H01L23/538 ; H01L23/00 ; H01L21/683 ; H01L23/16 ; H01L23/31 ; H01L23/29 ; H01L23/498
摘要：
A method of manufacturing a semiconductor device includes bonding a first semiconductor die and a second semiconductor die to a first substrate, forming a conductive layer over the first semiconductor die, the second semiconductor die, and the first substrate, applying an encapsulant over the conductive layer, and removing a portion of the encapsulant, wherein the removing the portion of the encapsulant exposes the conductive layer.
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