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公开(公告)号:US20240312852A1
公开(公告)日:2024-09-19
申请号:US18674930
申请日:2024-05-27
发明人: Shu-Shen Yeh , Che-Chia Yang , Chin-Hua Wang , Yu-Sheng Lin , Po-Yao Lin , Shin-Puu Jeng
IPC分类号: H01L23/10 , H01L21/48 , H01L23/00 , H01L23/053 , H01L23/31 , H01L25/065
CPC分类号: H01L23/10 , H01L21/4817 , H01L23/053 , H01L25/0655 , H01L23/3128 , H01L24/92
摘要: A manufacturing method of a semiconductor package includes the following steps. A first semiconductor device is provided over a substrate, wherein the first semiconductor device is offset toward an edge of the substrate. A ring structure is attached to the substrate by a first adhesive layer, wherein the ring structure surrounds the first semiconductor device and comprises an overhang portion cantilevered over the edge of the substrate. A lid structure is attached to the ring structure by a second adhesive layer, wherein the lid structure covers the first semiconductor device and comprises an extending portion covering the overhang portion.
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公开(公告)号:US20240290682A1
公开(公告)日:2024-08-29
申请号:US18658981
申请日:2024-05-08
发明人: Shu-Shen Yeh , Yu-Sheng Lin , Ming-Chih Yew , Po-Yao Lin , Shin-Puu Jeng
IPC分类号: H01L23/367 , H01L23/24 , H01L25/00 , H01L25/18
CPC分类号: H01L23/3675 , H01L23/24 , H01L25/18 , H01L25/50
摘要: Provided is a package structure including a substrate, a stiffener ring, an eccentric die, a lid layer, and a buffer layer. The stiffener ring is disposed on the substrate. The stiffener ring has an inner perimeter to enclose an accommodation area. The eccentric die is disposed within the accommodation area on the substrate. The eccentric die is offset from a center of the accommodation area to close to a first side of the stiffener ring. The lid layer is disposed on the stiffener ring and overlays the eccentric die. The buffer layer is embedded in the lid layer between the first side of the stiffener ring and the eccentric die. The buffer layer has a thickness less than a thickness of the lid layer.
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公开(公告)号:US12074101B2
公开(公告)日:2024-08-27
申请号:US18472271
申请日:2023-09-22
IPC分类号: H01L23/498 , H01L21/48 , H01L21/56 , H01L21/683 , H01L23/00 , H01L23/31 , H01L25/00 , H01L25/065
CPC分类号: H01L23/49838 , H01L21/4853 , H01L21/563 , H01L21/565 , H01L21/6835 , H01L23/3128 , H01L23/3135 , H01L23/49811 , H01L23/562 , H01L24/16 , H01L25/0655 , H01L25/50 , H01L2221/68331 , H01L2221/68372 , H01L2224/16227 , H01L2924/18161 , H01L2924/3511
摘要: A package structure includes a circuit substrate, a semiconductor package, first bump structures and second bump structures. The semiconductor package is disposed on the circuit substrate, wherein the semiconductor package includes a center region and side regions surrounding the center region. The first bump structures are disposed on the center region of the semiconductor package and electrically connecting the semiconductor package to the circuit substrate. The second bump structures are disposed on the side regions of the semiconductor package and electrically connecting the semiconductor package to the circuit substrate, wherein the first bump structures and the second bump structures have different heights and different shapes.
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公开(公告)号:US11984378B2
公开(公告)日:2024-05-14
申请号:US17319707
申请日:2021-05-13
发明人: Shu-Shen Yeh , Po-Yao Lin , Chin-Hua Wang , Yu-Sheng Lin , Shin-Puu Jeng
IPC分类号: H01L23/367 , H01L21/48 , H01L23/00 , H01L23/31 , H01L23/498 , H01L25/065
CPC分类号: H01L23/3675 , H01L21/4857 , H01L21/4882 , H01L23/3157 , H01L23/49816 , H01L23/49822 , H01L23/49833 , H01L23/49838 , H01L24/16 , H01L24/29 , H01L24/32 , H01L24/73 , H01L25/0655 , H01L2224/16235 , H01L2224/29017 , H01L2224/32225 , H01L2224/73204 , H01L2924/1815 , H01L2924/182 , H01L2924/3511 , H01L2924/35121
摘要: A semiconductor package structure includes an interposer substrate formed over a package substrate. The structure also includes a die disposed over the interposer substrate. The structure also includes a first heat spreader disposed over the package substrate. The structure also includes a second heat spreader disposed over the die and connected to the first heat spreader. The coefficient of thermal expansion (CTE) of the first heat spreader and the coefficient of thermal expansion of the second heat spreader are different.
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公开(公告)号:US11862580B2
公开(公告)日:2024-01-02
申请号:US17874308
申请日:2022-07-27
发明人: Chin-Hua Wang , Shu-Shen Yeh , Yu-Sheng Lin , Po-Yao Lin , Shin-Puu Jeng
IPC分类号: H01L23/00 , H01L23/367 , H01L23/498
CPC分类号: H01L23/562 , H01L23/3677 , H01L23/49816
摘要: A semiconductor package provided herein includes a wiring substrate, a semiconductor component, conductor terminals, a bottom stiffener and a top stiffener. The wiring substrate has a first surface and a second surface opposite to the first surface. The semiconductor component is disposed on the first surface of the wiring substrate. The conductor terminals are disposed on the second surface of the wiring substrate and electrically connected to the semiconductor component through the wiring substrate. The bottom stiffener is disposed on the second surface of the wiring substrate and positioned between the conductor terminals. The top stiffener is disposed on the first surface of the wiring substrate. The top stiffener is laterally spaced further away from the semiconductor component than the bottom stiffener.
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公开(公告)号:US20230378019A1
公开(公告)日:2023-11-23
申请号:US18353901
申请日:2023-07-18
发明人: Yu-Sheng Lin , Po-Yao Lin , Shu-Shen Yeh , Chin-Hua Wang , Shin-Puu Jeng
IPC分类号: H01L23/367 , H01L25/065 , H01L25/18
CPC分类号: H01L23/3675 , H01L25/0655 , H01L23/3672 , H01L25/18 , H01L25/0652 , H01L2224/73204 , H01L2224/16145 , H01L2224/16227 , H01L24/16
摘要: A package structure includes a circuit substrate, a semiconductor package, a thermal interface material, a lid structure and a heat dissipation structure. The semiconductor package is disposed on and electrically connected to the circuit substrate. The thermal interface material is disposed on the semiconductor package. The lid structure is disposed on the circuit substrate and surrounding the semiconductor package, wherein the lid structure comprises a supporting part that is partially covering and in physical contact with the thermal interface material. The heat dissipation structure is disposed on the lid structure and in physical contact with the supporting part of the lid structure.
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公开(公告)号:US11756854B2
公开(公告)日:2023-09-12
申请号:US17367401
申请日:2021-07-04
发明人: Yu-Sheng Lin , Po-Yao Lin , Shu-Shen Yeh , Chin-Hua Wang , Shin-Puu Jeng
IPC分类号: H01L23/367 , H01L25/065 , H01L25/18 , H01L23/00
CPC分类号: H01L23/3675 , H01L23/3672 , H01L25/0652 , H01L25/0655 , H01L25/18 , H01L24/16 , H01L24/73 , H01L2224/16145 , H01L2224/16227 , H01L2224/73204
摘要: A package structure includes a circuit substrate, a semiconductor package, a thermal interface material, a lid structure and a heat dissipation structure. The semiconductor package is disposed on and electrically connected to the circuit substrate. The thermal interface material is disposed on the semiconductor package. The lid structure is disposed on the circuit substrate and surrounding the semiconductor package, wherein the lid structure comprises a supporting part that is partially covering and in physical contact with the thermal interface material. The heat dissipation structure is disposed on the lid structure and in physical contact with the supporting part of the lid structure.
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公开(公告)号:US20230085280A1
公开(公告)日:2023-03-16
申请号:US17984259
申请日:2022-11-10
发明人: Shu-Shen Yeh , Yu-Sheng Lin , Ming-Chih Yew , Po-Yao Lin , Shin-Puu Jeng
IPC分类号: H01L23/367 , H01L25/00 , H01L23/24 , H01L25/18
摘要: Provided is a package structure including a substrate, a stiffener ring, an eccentric die, a lid layer, and a buffer layer. The stiffener ring is disposed on the substrate. The stiffener ring has an inner perimeter to enclose an accommodation area. The eccentric die is disposed within the accommodation area on the substrate. The eccentric die is offset from a center of the accommodation area to close to a first side of the stiffener ring. The lid layer is disposed on the stiffener ring and overlays the eccentric die. The buffer layer is embedded in the lid layer between the first side of the stiffener ring and the eccentric die. The buffer layer has a thickness less than a thickness of the lid layer.
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公开(公告)号:US20220310474A1
公开(公告)日:2022-09-29
申请号:US17362905
申请日:2021-06-29
发明人: Shu-Shen Yeh , Po-Yao Lin , Yu-Sheng Lin , Po-Chen Lai , Shin-Puu Jeng
IPC分类号: H01L23/367 , H01L23/538 , H01L23/00 , H01L23/31 , H01L21/56 , H01L25/065
摘要: A semiconductor device includes a substrate, a package structure, a first heat spreader, and a second heat spreader. The package structure is disposed on the substrate. The first heat spreader is disposed on the substrate. The first heat spreader surrounds the package structure. The second heat spreader is disposed on the package structure. The second heat spreader is connected to the first heat spreader. A material of the first heat spreader is different from a material of the second heat spreader.
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公开(公告)号:US12113006B2
公开(公告)日:2024-10-08
申请号:US18080683
申请日:2022-12-13
发明人: Chin-Hua Wang , Shu-Shen Yeh , Yu-Sheng Lin , Po-Yao Lin , Shin-Puu Jeng
IPC分类号: H01L23/498 , H01L23/00 , H01L23/31 , H01L25/065
CPC分类号: H01L23/49838 , H01L23/3128 , H01L23/49816 , H01L23/49822 , H01L23/49833 , H01L24/13 , H01L24/16 , H01L24/32 , H01L24/33 , H01L25/0655 , H01L2224/13023 , H01L2224/1357 , H01L2224/16235 , H01L2224/32225 , H01L2224/3303 , H01L2224/33179 , H01L2924/182
摘要: A semiconductor package includes an interposer, a semiconductor die, an underfill layer and an encapsulant. The semiconductor die is disposed over and electrically connected with the interposer, wherein the semiconductor die has a front surface, a back surface, a first side surface and a second side surface, the back surface is opposite to the front surface, the first side surface and the second side surface are connected with the front surface and the back surface, and the semiconductor die comprises a chamfered corner connected with the back surface, the first side surface and the second side surface, the chamfered corner comprises at least one side surface. The underfill layer is disposed between the front surface of the semiconductor die and the interposer. The encapsulant laterally encapsulates the semiconductor die and the underfill layer, wherein the encapsulant is in contact with the chamfered corner of the semiconductor die.
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