- Patent Title: Semiconductor device, memory cell and method of forming the same
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Application No.: US16851106Application Date: 2020-04-17
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Publication No.: US11489113B2Publication Date: 2022-11-01
- Inventor: Tung-Ying Lee , Shao-Ming Yu , Yu-Chao Lin
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: JCIPRNET
- Main IPC: H01L45/00
- IPC: H01L45/00

Abstract:
A memory cell includes a storage element layer, a bottom electrode, a top electrode and a liner layer. The storage element layer has a first surface and a concaved second surface opposite to the first surface. The bottom electrode is disposed on the first surface and connected to the storage element layer. The top electrode is on the concaved second surface and connected to the storage element layer. The liner layer is surrounding the storage element layer and the top electrode.
Public/Granted literature
- US20210328139A1 SEMICONDUCTOR DEVICE, MEMORY CELL AND METHOD OF FORMING THE SAME Public/Granted day:2021-10-21
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