- 专利标题： Managing dielectric stress of a memory device using controlled ramping slopes
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申请号： US17119576申请日： 2020-12-11
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公开(公告)号： US11494084B2公开(公告)日： 2022-11-08
- 发明人: Sheyang Ning , Lawrence Miranda
- 申请人： Micron Technology, Inc.
- 申请人地址： US ID Boise
- 专利权人： Micron Technology, Inc.
- 当前专利权人： Micron Technology, Inc.
- 当前专利权人地址： US ID Boise
- 代理机构： Lowenstein Sandler LLP
- 主分类号： G06F3/06
- IPC分类号： G06F3/06 ; G11C16/08 ; G11C16/10 ; G11C16/04
摘要：
Control logic in a memory device identifies a request to execute a memory access operation on the memory cell. A first set of pulses corresponding to a first voltage ramp slope level is caused to be applied to the memory cell during a first time interval of the memory access operation. The control logic causes a second set of pulses corresponding to a second voltage ramp slope level to be applied to the memory cell during a second time interval of the execution of the memory access operation, wherein the first slope level and the second slope level are different.