Invention Grant
- Patent Title: Three-dimensional semiconductor memory device
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Application No.: US16592886Application Date: 2019-10-04
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Publication No.: US11495541B2Publication Date: 2022-11-08
- Inventor: Bongsoon Lim , Sang-Wan Nam , Sang-Won Park , Sang-Won Shim , Hongsoo Jeon , Yonghyuk Choi
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Suwon-si
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si
- Agency: Muir Patent Law, PLLC
- Priority: KR10-2018-0149912 20181128
- Main IPC: H01L23/535
- IPC: H01L23/535 ; H01L27/11573 ; H01L27/11582

Abstract:
A three-dimensional semiconductor memory device may include a first stack structure block including first stack structures arranged in a first direction on a substrate, a second stack structure block including second stack structures arranged in the first direction on the substrate, a separation structure disposed on the substrate between the first and second stack structure blocks and including first mold layers and second mold layers, and a contact plug penetrating the separation structure. A bottom surface of the contact plug may contact the substrate.
Public/Granted literature
- US20200168547A1 THREE-DIMENSIONAL SEMICONDUCTOR MEMORY DEVICE Public/Granted day:2020-05-28
Information query
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