Invention Grant
- Patent Title: Semiconductor memory device and method of fabricating the same
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Application No.: US16875174Application Date: 2020-05-15
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Publication No.: US11495542B2Publication Date: 2022-11-08
- Inventor: Jiyoung Kim , Woosung Yang , Jungsok Lee , Byungjin Lee
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Suwon-si
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR10-2019-0092568 20190730
- Main IPC: H01L27/11582
- IPC: H01L27/11582 ; H01L23/535 ; H01L27/11524 ; H01L27/11556 ; H01L27/11529 ; H01L27/11519 ; H01L21/768 ; H01L27/11573 ; H01L27/11565 ; H01L27/1157

Abstract:
A semiconductor memory includes electrode structures that each includes horizontal electrodes stacked on each other a substrate, vertical electrodes between the electrode structures and extending along the horizontal electrodes, first contacts connected to the horizontal electrodes at end portions of the electrode structures, second contacts connected to upper portions of the vertical electrodes, and a first interconnection structure connected to top surfaces of the second contacts. The first interconnection structure includes first and second sub-interconnection lines. The sub-interconnection lines extend in a first direction and contact the top surfaces of the second contacts. The second sub-interconnection lines extended in a second direction crossing the first direction and contact the first sub-interconnection lines.
Public/Granted literature
- US20210035910A1 SEMICONDUCTOR MEMORY DEVICE AND METHOD OF FABRICATING THE SAME Public/Granted day:2021-02-04
Information query
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