Invention Grant
- Patent Title: Semiconductor devices and methods of manufacture
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Application No.: US16887458Application Date: 2020-05-29
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Publication No.: US11495544B2Publication Date: 2022-11-08
- Inventor: Shang-Yun Hou , Hsien-Pin Hu
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Slater Matsil, LLP
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L23/538 ; H01L23/498 ; H01L21/48 ; H01L21/56 ; H01L23/31
Abstract:
Semiconductor devices and methods of manufacture are provided. In embodiments the semiconductor device includes a substrate, a first interposer bonded to the substrate, a second interposer bonded to the substrate, a bridge component electrically connecting the first interposer to the second interposer, two or more first dies bonded to the first interposer; and two or more second dies bonded to the second interposer.
Public/Granted literature
- US11569172B2 Semiconductor devices and methods of manufacture Public/Granted day:2023-01-31
Information query
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