Invention Grant
- Patent Title: Semiconductor device
-
Application No.: US17056072Application Date: 2019-05-27
-
Publication No.: US11495691B2Publication Date: 2022-11-08
- Inventor: Toshihiko Takeuchi , Naoto Yamade , Yutaka Okazaki , Sachiaki Tezuka , Shunpei Yamazaki
- Applicant: Semiconductor Energy Laboratory Co., Ltd.
- Applicant Address: JP Atsugi
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Atsugi
- Agency: Robinson Intellectual Property Law Office
- Agent Eric J. Robinson
- Priority: JPJP2018-110077 20180608
- International Application: PCT/IB2019/054361 WO 20190527
- International Announcement: WO2019/234547 WO 20191212
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/786 ; H01L21/8234 ; H01L27/06 ; H01L27/088 ; H01L27/108 ; H01L27/12 ; H01L29/792
Abstract:
The semiconductor device includes a first conductor and a second conductor; a first insulator to a third insulator; and a first oxide to a third oxide. The first conductor is disposed to be exposed from a top surface of the first insulator. The first oxide is disposed over the first insulator and the first conductor. A first opening reaching the first conductor is provided in the first oxide. The second oxide is disposed over the first oxide. The second oxide comprises a first region, a second region, and a third region positioned between the first region and the second region. The third oxide is disposed over the second oxide. The second insulator is disposed over the third oxide. The second conductor is disposed over the second insulator. The third insulator is disposed to cover the first region and the second region and to be in contact with the top surface of the first insulator.
Public/Granted literature
- US20210210640A1 SEMICONDUCTOR DEVICE Public/Granted day:2021-07-08
Information query
IPC分类:
