公开(公告)号：US11869979B2

公开(公告)日：2024-01-09

申请号：US17727038

申请日：2022-04-22

申请人： Semiconductor Energy Laboratory Co., Ltd.

发明人： Shunpei Yamazaki ,  Katsuaki Tochibayashi ,  Ryota Hodo ,  Kentaro Sugaya ,  Naoto Yamade

IPC分类号： H01L27/00 ,  H01L29/00 ,  H01L29/786 ,  H01L29/24 ,  H01L29/66 ,  H10B12/00

CPC分类号： H01L29/7869 ,  H01L29/24 ,  H01L29/66742 ,  H10B12/05 ,  H10B12/31

摘要： A semiconductor device includes a transistor including, a first to fifth insulator, a first to third oxide, a first to third conductor. An opening reaching the second oxide is provided in the fourth insulator and the fifth insulator. The third oxide, the third insulator, and the third conductor are arranged sequentially from the inner wall side of the opening so as to fill the opening. In the channel length direction of the transistor, at least part of the fourth insulator in a region where the fourth insulator and the second oxide do not overlap with each other is in contact with the first insulator. In the channel width direction of the transistor, at least part of the third oxide in a region where the third oxide and the second oxide do not overlap with each other is in contact with the first insulator.

公开(公告)号：US10910359B2

公开(公告)日：2021-02-02

申请号：US16561501

申请日：2019-09-05

申请人： Semiconductor Energy Laboratory Co., Ltd.

发明人： Naoki Okuno ,  Kosei Nei ,  Hiroaki Honda ,  Naoto Yamade ,  Hiroshi Fujiki

IPC分类号： H01L27/02 ,  H01L27/11521 ,  H01L27/11519 ,  H01L27/11565 ,  H01L29/786

摘要： A transistor includes a first insulator over a substrate; a first oxide thereover; a second oxide in contact with at least part of the top surface of the first oxide; a first conductor and a second conductor each in contact with at least part of the top surface of the second oxide; a third oxide that is over the first conductor and the second conductor and is in contact with at least part of the top surface of the second oxide; a second insulator thereover; a third conductor which is over the second insulator and at least part of which overlaps with a region between the first conductor and the second conductor; and a third insulator which is over the third conductor and at least part of which is in contact with the top surface of the first insulator. The thickness of a region of the first insulator that is in contact with the third insulator is less than the thickness of a region of the first insulator that is in contact with the first oxide.

公开(公告)号：US10276724B2

公开(公告)日：2019-04-30

申请号：US15204015

申请日：2016-07-07

申请人： Semiconductor Energy Laboratory Co., Ltd.

发明人： Yutaka Okazaki ,  Akihisa Shimomura ,  Naoto Yamade ,  Tomoya Takeshita ,  Tetsuhiro Tanaka

IPC分类号： H01L29/786 ,  H01L29/66 ,  H01L29/45 ,  H01L29/49 ,  H01L27/12

摘要： A transistor with favorable electrical characteristics is provided. One embodiment of the present invention is a semiconductor device including a semiconductor, a first insulator in contact with the semiconductor, a first conductor in contact with the first insulator and overlapping with the semiconductor with the first insulator positioned between the semiconductor and the first conductor, and a second conductor and a third conductor, which are in contact with the semiconductor. One or more of the first to third conductors include a region containing tungsten and one or more elements selected from silicon, carbon, germanium, tin, aluminum, and nickel.

公开(公告)号：US20180197997A1

公开(公告)日：2018-07-12

申请号：US15864033

申请日：2018-01-08

申请人： Semiconductor Energy Laboratory Co., Ltd.

发明人： Daigo ITO ,  Daisuke Matsubayashi ,  Masaharu Nagai ,  Yoshiaki Yamamoto ,  Takashi Hamada ,  Yutaka Okazaki ,  Shinya Sasagawa ,  Motomu Kurata ,  Naoto Yamade

IPC分类号： H01L29/786 ,  H01L29/66 ,  H01L21/425 ,  H01L21/46 ,  H01L27/12

CPC分类号： H01L29/78693 ,  H01L21/425 ,  H01L21/46 ,  H01L27/1207 ,  H01L27/1225 ,  H01L27/1262 ,  H01L29/24 ,  H01L29/42384 ,  H01L29/4908 ,  H01L29/66969 ,  H01L29/7782 ,  H01L29/7854 ,  H01L29/7855 ,  H01L29/78618 ,  H01L29/78648 ,  H01L29/7869 ,  H01L29/78696

摘要： A semiconductor device includes a first insulating layer over a substrate, a first metal oxide layer over the first insulating layer, an oxide semiconductor layer over the first metal oxide layer, a second metal oxide layer over the oxide semiconductor layer, a gate insulating layer over the second metal oxide layer, a second insulating layer over the second metal oxide layer, and a gate electrode layer over the gate insulating layer. The gate insulating layer includes a region in contact with a side surface of the gate electrode layer. The second insulating layer includes a region in contact with the gate insulating layer. The oxide semiconductor layer includes first to third regions. The first region includes a region overlapping with the gate electrode layer. The second region, which is between the first and third regions, includes a region overlapping with the gate insulating layer or the second insulating layer. The second and third regions each include a region containing an element N (N is phosphorus, argon, or xenon).

公开(公告)号：US09871145B2

公开(公告)日：2018-01-16

申请号：US15628699

申请日：2017-06-21

申请人： Semiconductor Energy Laboratory Co., Ltd.

发明人： Daigo Ito ,  Daisuke Matsubayashi ,  Masaharu Nagai ,  Yoshiaki Yamamoto ,  Takashi Hamada ,  Yutaka Okazaki ,  Shinya Sasagawa ,  Motomu Kurata ,  Naoto Yamade

IPC分类号： H01L29/10 ,  H01L29/12 ,  H01L29/786 ,  H01L29/66 ,  H01L21/425 ,  H01L21/46 ,  H01L27/12

CPC分类号： H01L29/78693 ,  H01L21/425 ,  H01L21/46 ,  H01L27/1207 ,  H01L27/1225 ,  H01L27/1262 ,  H01L29/24 ,  H01L29/42384 ,  H01L29/4908 ,  H01L29/66969 ,  H01L29/7782 ,  H01L29/7854 ,  H01L29/7855 ,  H01L29/78618 ,  H01L29/78648 ,  H01L29/7869 ,  H01L29/78696

摘要： A semiconductor device includes a first insulating layer over a substrate, a first metal oxide layer over the first insulating layer, an oxide semiconductor layer over the first metal oxide layer, a second metal oxide layer over the oxide semiconductor layer, a gate insulating layer over the second metal oxide layer, a second insulating layer over the second metal oxide layer, and a gate electrode layer over the gate insulating layer. The gate insulating layer includes a region in contact with a side surface of the gate electrode layer. The second insulating layer includes a region in contact with the gate insulating layer. The oxide semiconductor layer includes first to third regions. The first region includes a region overlapping with the gate electrode layer. The second region, which is between the first and third regions, includes a region overlapping with the gate insulating layer or the second insulating layer. The second and third regions each include a region containing an element N (N is phosphorus, argon, or xenon).

公开(公告)号：US11495691B2

公开(公告)日：2022-11-08

申请号：US17056072

申请日：2019-05-27

申请人： Semiconductor Energy Laboratory Co., Ltd.

发明人： Toshihiko Takeuchi ,  Naoto Yamade ,  Yutaka Okazaki ,  Sachiaki Tezuka ,  Shunpei Yamazaki

IPC分类号： H01L29/78 ,  H01L29/786 ,  H01L21/8234 ,  H01L27/06 ,  H01L27/088 ,  H01L27/108 ,  H01L27/12 ,  H01L29/792

摘要： The semiconductor device includes a first conductor and a second conductor; a first insulator to a third insulator; and a first oxide to a third oxide. The first conductor is disposed to be exposed from a top surface of the first insulator. The first oxide is disposed over the first insulator and the first conductor. A first opening reaching the first conductor is provided in the first oxide. The second oxide is disposed over the first oxide. The second oxide comprises a first region, a second region, and a third region positioned between the first region and the second region. The third oxide is disposed over the second oxide. The second insulator is disposed over the third oxide. The second conductor is disposed over the second insulator. The third insulator is disposed to cover the first region and the second region and to be in contact with the top surface of the first insulator.

公开(公告)号：US09780201B2

公开(公告)日：2017-10-03

申请号：US15223002

申请日：2016-07-29

申请人： Semiconductor Energy Laboratory Co., Ltd.

发明人： Yoshinori Ando ,  Hidekazu Miyairi ,  Naoto Yamade ,  Asako Higa ,  Miki Suzuki ,  Yoshinori Ieda ,  Yasutaka Suzuki ,  Kosei Nei ,  Shunpei Yamazaki

IPC分类号： H01L21/02 ,  H01L21/477 ,  H01L29/66 ,  C23C14/08 ,  C23C14/35 ,  H01L21/469 ,  H01L21/4757 ,  H01L21/822 ,  H01L27/06 ,  H01L27/088 ,  H01L27/12 ,  H01L29/786

CPC分类号： H01L29/66969 ,  C23C14/086 ,  C23C14/351 ,  H01L21/0214 ,  H01L21/0217 ,  H01L21/02318 ,  H01L21/469 ,  H01L21/4757 ,  H01L21/477 ,  H01L21/8221 ,  H01L27/0688 ,  H01L27/088 ,  H01L27/1225 ,  H01L27/1255 ,  H01L27/1259 ,  H01L29/78603 ,  H01L29/78606 ,  H01L29/7869 ,  H01L29/78693

摘要： To improve the electrical characteristics of a semiconductor device including an oxide semiconductor, and to provide a highly reliable semiconductor device with a small variation in electrical characteristics. The semiconductor device includes a first insulating film, a first barrier film over the first insulating film, a second insulating film over the first barrier film, and a first transistor including a first oxide semiconductor film over the second insulating film. The amount of hydrogen molecules released from the first insulating film at a given temperature higher than or equal to 400° C., which is measured by thermal desorption spectroscopy, is less than or equal to 130% of the amount of released hydrogen molecules at 300° C. The second insulating film includes a region containing oxygen at a higher proportion than oxygen in the stoichiometric composition.

公开(公告)号：US09691905B2

公开(公告)日：2017-06-27

申请号：US15182812

申请日：2016-06-15

申请人： Semiconductor Energy Laboratory Co., Ltd.

发明人： Daigo Ito ,  Daisuke Matsubayashi ,  Masaharu Nagai ,  Yoshiaki Yamamoto ,  Takashi Hamada ,  Yutaka Okazaki ,  Shinya Sasagawa ,  Motomu Kurata ,  Naoto Yamade

IPC分类号： H01L21/00 ,  H01L21/16 ,  H01L29/786 ,  H01L29/66 ,  H01L21/425 ,  H01L21/46 ,  H01L27/12

CPC分类号： H01L29/78693 ,  H01L21/425 ,  H01L21/46 ,  H01L27/1207 ,  H01L27/1225 ,  H01L27/1262 ,  H01L29/24 ,  H01L29/42384 ,  H01L29/4908 ,  H01L29/66969 ,  H01L29/7782 ,  H01L29/7854 ,  H01L29/7855 ,  H01L29/78618 ,  H01L29/78648 ,  H01L29/7869 ,  H01L29/78696

摘要： A semiconductor device includes a first insulating layer over a substrate, a first metal oxide layer over the first insulating layer, an oxide semiconductor layer over the first metal oxide layer, a second metal oxide layer over the oxide semiconductor layer, a gate insulating layer over the second metal oxide layer, a second insulating layer over the second metal oxide layer, and a gate electrode layer over the gate insulating layer. The gate insulating layer includes a region in contact with a side surface of the gate electrode layer. The second insulating layer includes a region in contact with the gate insulating layer. The oxide semiconductor layer includes first to third regions. The first region includes a region overlapping with the gate electrode layer. The second region, which is between the first and third regions, includes a region overlapping with the gate insulating layer or the second insulating layer. The second and third regions each include a region containing an element N (N is phosphorus, argon, or xenon).

公开(公告)号：US09431435B2

公开(公告)日：2016-08-30

申请号：US14520196

申请日：2014-10-21

申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

发明人： Yoshinori Ando ,  Hidekazu Miyairi ,  Naoto Yamade ,  Asako Higa ,  Miki Suzuki ,  Yoshinori Ieda ,  Yasutaka Suzuki ,  Kosei Nei ,  Shunpei Yamazaki

IPC分类号： H01L27/12 ,  H01L29/786 ,  H01L21/02 ,  H01L21/469 ,  C23C14/08 ,  C23C14/35 ,  H01L29/66 ,  H01L21/822 ,  H01L27/06

CPC分类号： H01L29/66969 ,  C23C14/086 ,  C23C14/351 ,  H01L21/0214 ,  H01L21/0217 ,  H01L21/02318 ,  H01L21/469 ,  H01L21/4757 ,  H01L21/477 ,  H01L21/8221 ,  H01L27/0688 ,  H01L27/088 ,  H01L27/1225 ,  H01L27/1255 ,  H01L27/1259 ,  H01L29/78603 ,  H01L29/78606 ,  H01L29/7869 ,  H01L29/78693

摘要： To improve the electrical characteristics of a semiconductor device including an oxide semiconductor, and to provide a highly reliable semiconductor device with a small variation in electrical characteristics. The semiconductor device includes a first insulating film, a first barrier film over the first insulating film, a second insulating film over the first barrier film, and a first transistor including a first oxide semiconductor film over the second insulating film. The amount of hydrogen molecules released from the first insulating film at a given temperature higher than or equal to 400° C., which is measured by thermal desorption spectroscopy, is less than or equal to 130% of the amount of released hydrogen molecules at 300° C. The second insulating film includes a region containing oxygen at a higher proportion than oxygen in the stoichiometric composition.

摘要翻译： 为了改善包括氧化物半导体的半导体器件的电特性，并且提供具有小的电特性变化的高度可靠的半导体器件。 半导体器件包括第一绝缘膜，第一绝缘膜上的第一阻挡膜，第一阻挡膜上的第二绝缘膜，以及包括第二绝缘膜上的第一氧化物半导体膜的第一晶体管。 在通过热解吸光谱法测量的高于或等于400℃的给定温度下，从第一绝缘膜释放的氢分子的量小于或等于在300℃下释放的氢分子的量的130％ 第二绝缘膜包括在化学计量组成中含有比氧更高比例的氧的区域。

公开(公告)号：US09269825B2

公开(公告)日：2016-02-23

申请号：US14311791

申请日：2014-06-23

申请人： Semiconductor Energy Laboratory Co., Ltd.

发明人： Naoto Yamade ,  Junichi Koezuka

IPC分类号： H01L29/10 ,  H01L29/15 ,  H01L21/00 ,  H01L21/84 ,  H01L29/786 ,  H01L21/02 ,  H01L27/12 ,  H01L29/04

CPC分类号： H01L29/78693 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L27/12 ,  H01L29/04 ,  H01L29/10 ,  H01L29/7869

摘要： A semiconductor device which is miniaturized and has sufficient electrical characteristics to function as a transistor is provided. In a semiconductor device including a transistor in which a semiconductor layer, a gate insulating layer, and a gate electrode layer are stacked in that order, an oxide semiconductor film which contains at least four kinds of elements of indium, gallium, zinc, and oxygen, and in which the percentage of the indium is twice or more as large as each of the percentage of the gallium and the percentage of the zinc when the composition of the four elements is expressed in atomic percentage is used as the semiconductor layer. In the semiconductor device, the oxide semiconductor film is a film to which oxygen is introduced in the manufacturing process and contains a large amount of oxygen, and an insulating layer including an aluminum oxide film is provided to cover the transistor.

摘要翻译： 提供小型化并具有足够的电特性用作晶体管的半导体器件。 在包括半导体层，栅极绝缘层和栅极电极层的晶体管的半导体器件中，依次包含铟，镓，锌和氧中的至少四种元素的氧化物半导体膜 ，并且其中当四种元素的组成以原子百分比表示时，铟的百分比是镓的百分比和锌的百分比的两倍或更多，而作为半导体层。 在半导体器件中，氧化物半导体膜是在制造过程中引入氧并含有大量氧的膜，并且提供包括氧化铝膜的绝缘层以覆盖晶体管。