Invention Grant
- Patent Title: Thin film transistor comprising oxide semiconductor layer and silicon semiconductor layer and display apparatus comprising the same
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Application No.: US17121248Application Date: 2020-12-14
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Publication No.: US11495692B2Publication Date: 2022-11-08
- Inventor: Jaeman Jang , PilSang Yun , Jiyong Noh , InTak Cho
- Applicant: LG Display Co., Ltd.
- Applicant Address: KR Seoul
- Assignee: LG Display Co., Ltd.
- Current Assignee: LG Display Co., Ltd.
- Current Assignee Address: KR Seoul
- Agency: Fenwick & West LLP
- Priority: KR10-2019-0175593 20191226
- Main IPC: H01L29/786
- IPC: H01L29/786 ; H01L29/66

Abstract:
Disclosed are a thin film transistor, a display apparatus comprising the thin film transistor, and a method for manufacturing the thin film transistor. The thin film transistor comprises an active layer, and a gate electrode spaced apart from the active layer and configured to have at least a portion overlapped with the active layer, wherein the active layer includes a silicon semiconductor layer, and an oxide semiconductor layer which contacts the silicon semiconductor layer, wherein at least a portion of the silicon semiconductor layer and at least a portion of the oxide semiconductor layer are overlapped with the gate electrode.
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Information query
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