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    Display apparatus comprising different types of thin film transistors and method for manufacturing the same
    1.
    发明授权
    Display apparatus comprising different types of thin film transistors and method for manufacturing the same 有权

    公开(公告)号：US11658189B2

    公开(公告)日：2023-05-23

    申请号：US17196805

    申请日：2021-03-09

    Applicant: LG Display Co., Ltd.

    Inventor： Jaeman Jang ,  SeHee Park ,  DaeHwan Kim ,  PilSang Yun

    IPC: H01L27/12 ,  H01L27/32

    CPC classification number: H01L27/1255 ,  H01L27/1225 ,  H01L27/1251 ,  H01L27/3262

    Abstract: A display apparatus includes a substrate; a pixel driving circuit on the substrate; and a display unit connected with the pixel driving circuit, wherein the pixel driving circuit includes a first thin film transistor and a second thin film transistor, wherein the first thin film transistor includes, a first gate electrode on the substrate, a first active layer spaced apart from the first gate electrode and overlapping at least a part of the first gate electrode, a first source electrode connected with the first active layer; and a first drain electrode spaced apart from the first source electrode and connected with the first active layer, and wherein the second thin film transistor includes, a second active layer on the substrate, and a second gate electrode spaced apart from the second active layer and partially overlapping at least a part of the second active layer, wherein the first gate electrode is disposed between the substrate and the first active layer, the second active layer is disposed between the substrate and the second gate electrode, and the first gate electrode and the second gate electrode are disposed at an opposite side with respect to the second active layer.

    Transistor and electronic device
    2.
    发明授权
    Transistor and electronic device 有权

    公开(公告)号：US11476281B2

    公开(公告)日：2022-10-18

    申请号：US16521906

    申请日：2019-07-25

    Applicant: LG Display Co., Ltd.

    Inventor： SeHee Park ,  JungSeok Seo ,  Jaeyoon Park ,  PilSang Yun ,  Jiyong Noh

    IPC: H01L27/12 ,  H01L29/22

    Abstract: An electronic device comprises a panel, a driving circuit configured to drive the panel, and a transistor disposed in the panel. The transistor includes a first insulation film on a substrate, an active layer disposed on the first insulation film, a second insulation film disposed on the active layer and the first insulation film to cover the active layer, the second insulation film having a thickness smaller than a thickness of the first insulation film, a source electrode disposed on the second insulation film and spaced apart from the active layer by the second insulation film, the source electrode overlapping an end of the active layer, and a drain electrode disposed on the second insulation film and spaced apart from the active layer by the second insulation film, the drain electrode overlapping another end of the active layer.

    Panel, transistor and electronic device
    3.
    发明授权
    Panel, transistor and electronic device 有权

    公开(公告)号：US10777772B2

    公开(公告)日：2020-09-15

    申请号：US16668262

    申请日：2019-10-30

    Applicant: LG Display Co., Ltd.

    Inventor： Jiyong Noh ,  PilSang Yun ,  SeHee Park ,  JungSeok Seo

    IPC: H01L51/52 ,  H01L27/12 ,  H01L27/32

    Abstract: A panel comprises a substrate, a semiconductor layer on the substrate, and including an oxide semiconductor or a low-temperature polycrystalline silicon, an interlayer insulating film on the substrate and the semiconductor layer, a passivation layer on the interlayer insulating film, an overcoat layer on the passivation layer, a light emitting layer on the overcoat layer, and an encapsulation layer on the light emitting layer. The encapsulation layer includes an auxiliary encapsulation layer having at least one of a silicon nitride (SiNx:H) layer including hydrogen, a silicon oxide (SiO2:H) layer including hydrogen, or a silicon oxynitride (SiON:H) layer including hydrogen. At least one of the interlayer insulating film, the passivation layer, or the overcoat layer is a hydrogen trapping layer.

    Apparatus and method of manufacturing oxide film and display apparatus including the oxide film
    5.
    发明授权
    Apparatus and method of manufacturing oxide film and display apparatus including the oxide film 有权

    公开(公告)号：US12258663B2

    公开(公告)日：2025-03-25

    申请号：US18180585

    申请日：2023-03-08

    Applicant: LG Display Co., Ltd.

    Inventor： Jaeyoon Park ,  JaeHyeon Park ,  KiHoon Park ,  PilSang Yun

    IPC: C23C16/455 ,  C23C16/40 ,  C23C16/44 ,  C23C16/448 ,  H01L27/12

    Abstract: Disclosed are an apparatus and method of manufacturing an oxide film having a uniform composition and thickness. The apparatus includes a lower chamber including a reaction space, a susceptor to support a substrate, a chamber lid including gas injection ports, a gas distribution module between the chamber lid and the susceptor and connected to the gas injection ports, a first source container module comprising a first source gas having a first vapor pressure, a first carrier gas supply module supplying a first carrier gas to the first source container module, a second source container module comprising a second source gas having a second vapor pressure, a force gas supply module supplying a force gas, and a reactant gas supply module supplying a reactant gas.

    Thin-film transistor array substrate and electronic device including the same
    8.
    发明授权
    Thin-film transistor array substrate and electronic device including the same 有权

    公开(公告)号：US10943546B2

    公开(公告)日：2021-03-09

    申请号：US16694674

    申请日：2019-11-25

    Applicant: LG DISPLAY CO., LTD.

    Inventor： InTak Cho ,  PilSang Yun ,  Jeyong Jeon ,  Jiyong Noh ,  SeHee Park

    IPC: G09G3/3291 ,  G09G3/3266 ,  H01L27/32

    Abstract: An electronic device includes a panel including first and second transistors and a driver circuit driving the panel. The first transistor includes a first electrode disposed on a substrate, a first insulating film disposed on the substrate and having an open area, a second electrode disposed on the first insulating film and overlapping the first electrode, and a first active layer disposed on the first and second electrodes. The second transistor includes third and fourth electrodes which are disposed to space apart from, and on a same layer as, the second electrode, and between which the open area is disposed, and a second active layer disposed on the third and fourth electrodes and across the open area.

    Electronic device
    10.
    发明授权
    Electronic device 有权

    公开(公告)号：US12178090B2

    公开(公告)日：2024-12-24

    申请号：US16923444

    申请日：2020-07-08

    Applicant: LG Display Co., Ltd.

    Inventor： SeHee Park ,  InTak Cho ,  PilSang Yun

    IPC: H10K59/131 ,  G09G3/3291 ,  H10K59/124

    Abstract: Provided is an electronic device. The electronic device includes at least one first transistor to which a data voltage is applied. The first transistor includes a first conductive layer disposed on a substrate and a first active layer, which is disposed on the first conductive layer, has one end and the other end which are made conductive, and includes a first channel region disposed between the one end and the other end. A second conductive layer overlapping the first conductive layer with a first insulating layer interposed between the second conductive layer and the first conductive layer is included in a storage capacitor in a panel, and the storage capacitor is disposed under the first channel region of the first active layer. In this way, an ultra-high definition panel is fabricated.

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