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公开(公告)号:US10943546B2
公开(公告)日:2021-03-09
申请号:US16694674
申请日:2019-11-25
Applicant: LG DISPLAY CO., LTD.
Inventor: InTak Cho , PilSang Yun , Jeyong Jeon , Jiyong Noh , SeHee Park
IPC: G09G3/3291 , G09G3/3266 , H01L27/32
Abstract: An electronic device includes a panel including first and second transistors and a driver circuit driving the panel. The first transistor includes a first electrode disposed on a substrate, a first insulating film disposed on the substrate and having an open area, a second electrode disposed on the first insulating film and overlapping the first electrode, and a first active layer disposed on the first and second electrodes. The second transistor includes third and fourth electrodes which are disposed to space apart from, and on a same layer as, the second electrode, and between which the open area is disposed, and a second active layer disposed on the third and fourth electrodes and across the open area.
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公开(公告)号:US11678518B2
公开(公告)日:2023-06-13
申请号:US17344903
申请日:2021-06-10
Applicant: LG Display Co., Ltd.
Inventor: JungSeok Seo , PilSang Yun , SeHee Park , Jiyong Noh
IPC: H10K59/121 , H10K59/131 , H01L27/12 , H10K59/12 , H01L27/32
CPC classification number: H01L27/3262 , H01L27/124 , H01L27/127 , H01L27/1262 , H01L27/3276 , H01L2227/323
Abstract: A display device includes a substrate, a pixel driver on the substrate, and a display element connected to the pixel driver. The pixel driver includes a conductive layer on the substrate, a buffer layer on the conductive layer, a semiconductor layer on the buffer layer, a gate electrode, the gate electrode overlapping the semiconductor layer, and a source electrode and a drain electrode connected to the semiconductor layer. The buffer layer includes a flattened portion overlapping the conductive layer, and a stepped portion overlapping the periphery of the conductive layer. The semiconductor layer includes a first oxide semiconductor layer on the buffer layer, and a second oxide semiconductor layer on the first oxide semiconductor layer. A width of the first oxide semiconductor layer is larger than a width of the second oxide semiconductor layer, and the first oxide semiconductor layer is on the stepped portion of the buffer layer.
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公开(公告)号:US10396099B2
公开(公告)日:2019-08-27
申请号:US15391636
申请日:2016-12-27
Applicant: LG Display Co., Ltd.
Inventor: JongUk Bae , YongHo Jang , JunHyeon Bae , Kwanghwan Ji , PilSang Yun , Jiyong Noh
IPC: H01L27/12 , G02F1/1368 , H01L27/32 , G02F1/1362 , H01L29/786 , G09G3/36 , G09G3/3266 , G09G3/3258 , G09G3/3275 , H01L29/417 , H01L29/66
Abstract: Disclosed are an oxide thin film transistor (TFT), a method of manufacturing the same, and a display panel and a display device using the same, in which a first conductor and a second conductor are provided at end portions of a semiconductor layer formed of oxide semiconductor. The first conductor and second conductor are electrically connected to a first electrode and a second electrode, and covered by a gate insulation layer. The oxide TFT includes a semiconductor layer provided on a buffer and including an oxide semiconductor, a gate insulation layer covering the semiconductor layer and the buffer, a gate electrode provided on the gate insulation layer to overlap a portion of the semiconductor layer, and a passivation layer covering the gate and the gate insulation layer.
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公开(公告)号:US11901461B2
公开(公告)日:2024-02-13
申请号:US17958167
申请日:2022-09-30
Applicant: LG Display Co., Ltd.
Inventor: Jaeman Jang , PilSang Yun , Jiyong Noh , InTak Cho
IPC: H01L29/786 , H01L29/66
CPC classification number: H01L29/78693 , H01L29/6675 , H01L29/78618 , H01L29/78696
Abstract: Disclosed are a thin film transistor, a display apparatus comprising the thin film transistor, and a method for manufacturing the thin film transistor. The thin film transistor comprises an active layer, and a gate electrode spaced apart from the active layer and configured to have at least a portion overlapped with the active layer, wherein the active layer includes a silicon semiconductor layer, and an oxide semiconductor layer which contacts the silicon semiconductor layer, wherein at least a portion of the silicon semiconductor layer and at least a portion of the oxide semiconductor layer are overlapped with the gate electrode.
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公开(公告)号:US11588027B2
公开(公告)日:2023-02-21
申请号:US17131284
申请日:2020-12-22
Applicant: LG Display Co., Ltd.
Inventor: InTak Cho , Jiyong Noh , Jaeman Jang , PilSang Yun , Jeyong Jeon
IPC: G09G3/32 , H01L29/40 , H01L27/12 , H01L29/786 , H01L21/765 , H01L29/66 , H01L21/02
Abstract: A thin film transistor, a display panel comprising the same and a display apparatus are discussed. The thin film transistor comprises a buffer layer embodied on a substrate, a semiconductor layer embodied on the buffer layer, including a channel area, a first conductor portion and a second conductor portion, a gate insulating film embodied on the semiconductor layer, a gate electrode embodied on the gate insulating film, and an auxiliary electrode overlapped with the second conductor portion, wherein the first conductor portion is extended from one side of the channel area, and becomes a source area, and the second conductor portion is extended from the other side of the channel area, and becomes a drain area.
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公开(公告)号:US11495692B2
公开(公告)日:2022-11-08
申请号:US17121248
申请日:2020-12-14
Applicant: LG Display Co., Ltd.
Inventor: Jaeman Jang , PilSang Yun , Jiyong Noh , InTak Cho
IPC: H01L29/786 , H01L29/66
Abstract: Disclosed are a thin film transistor, a display apparatus comprising the thin film transistor, and a method for manufacturing the thin film transistor. The thin film transistor comprises an active layer, and a gate electrode spaced apart from the active layer and configured to have at least a portion overlapped with the active layer, wherein the active layer includes a silicon semiconductor layer, and an oxide semiconductor layer which contacts the silicon semiconductor layer, wherein at least a portion of the silicon semiconductor layer and at least a portion of the oxide semiconductor layer are overlapped with the gate electrode.
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公开(公告)号:US11594556B2
公开(公告)日:2023-02-28
申请号:US17378333
申请日:2021-07-16
Applicant: LG Display Co., Ltd.
Inventor: SeHee Park , InTak Cho , DaeHwan Kim , JuHeyuck Baeck , Jiyong Noh
IPC: H01L27/12 , H01L29/786 , H01L29/49 , G11C19/28 , G09G3/3225 , G09G3/3266 , G09G3/3233
Abstract: A thin film transistor substrate can include a buffer layer on a base substrate and having a first buffer layer and a second buffer layer; a semiconductor layer disposed on the buffer layer; a gate insulating film on the semiconductor layer; and a gate electrode spaced apart from the semiconductor layer, at least a part of the gate electrode overlapping with the semiconductor layer. The base substrate, the first buffer layer, the second buffer layer, the semiconductor layer, the gate insulating film and the gate electrode are sequentially stacked, and a surface oxygen concentration of the first buffer layer is higher than a surface oxygen concentration of the second buffer layer.
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公开(公告)号:US11476281B2
公开(公告)日:2022-10-18
申请号:US16521906
申请日:2019-07-25
Applicant: LG Display Co., Ltd.
Inventor: SeHee Park , JungSeok Seo , Jaeyoon Park , PilSang Yun , Jiyong Noh
Abstract: An electronic device comprises a panel, a driving circuit configured to drive the panel, and a transistor disposed in the panel. The transistor includes a first insulation film on a substrate, an active layer disposed on the first insulation film, a second insulation film disposed on the active layer and the first insulation film to cover the active layer, the second insulation film having a thickness smaller than a thickness of the first insulation film, a source electrode disposed on the second insulation film and spaced apart from the active layer by the second insulation film, the source electrode overlapping an end of the active layer, and a drain electrode disposed on the second insulation film and spaced apart from the active layer by the second insulation film, the drain electrode overlapping another end of the active layer.
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公开(公告)号:US10777772B2
公开(公告)日:2020-09-15
申请号:US16668262
申请日:2019-10-30
Applicant: LG Display Co., Ltd.
Inventor: Jiyong Noh , PilSang Yun , SeHee Park , JungSeok Seo
Abstract: A panel comprises a substrate, a semiconductor layer on the substrate, and including an oxide semiconductor or a low-temperature polycrystalline silicon, an interlayer insulating film on the substrate and the semiconductor layer, a passivation layer on the interlayer insulating film, an overcoat layer on the passivation layer, a light emitting layer on the overcoat layer, and an encapsulation layer on the light emitting layer. The encapsulation layer includes an auxiliary encapsulation layer having at least one of a silicon nitride (SiNx:H) layer including hydrogen, a silicon oxide (SiO2:H) layer including hydrogen, or a silicon oxynitride (SiON:H) layer including hydrogen. At least one of the interlayer insulating film, the passivation layer, or the overcoat layer is a hydrogen trapping layer.
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公开(公告)号:US11574843B2
公开(公告)日:2023-02-07
申请号:US17124344
申请日:2020-12-16
Applicant: LG Display Co., Ltd.
Inventor: KyungChul Ok , JungSeok Seo , PilSang Yun , Jiyong Noh , Jaeman Jang , InTak Cho
IPC: H01L21/8234 , H01L27/32 , H01L29/66 , H01L29/786 , H01L21/02 , H01L27/12
Abstract: Disclosed is a thin film transistor, a method for manufacturing the same and a display apparatus comprising the same, wherein the thin film transistor includes a first insulating layer on a substrate, an active layer on the first insulating layer, and a gate electrode spaced apart from the active layer and configured to have at least a portion overlapped with the active layer, wherein the active layer has a single crystal structure of an oxide semiconductor material, and an upper surface of the first insulating layer which contacts the active layer is an oxygen (O) layer made of oxygen (O).
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