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    Thin-film transistor array substrate and electronic device including the same
    1.
    发明授权
    Thin-film transistor array substrate and electronic device including the same 有权

    公开(公告)号：US10943546B2

    公开(公告)日：2021-03-09

    申请号：US16694674

    申请日：2019-11-25

    Applicant: LG DISPLAY CO., LTD.

    Inventor： InTak Cho ,  PilSang Yun ,  Jeyong Jeon ,  Jiyong Noh ,  SeHee Park

    IPC: G09G3/3291 ,  G09G3/3266 ,  H01L27/32

    Abstract: An electronic device includes a panel including first and second transistors and a driver circuit driving the panel. The first transistor includes a first electrode disposed on a substrate, a first insulating film disposed on the substrate and having an open area, a second electrode disposed on the first insulating film and overlapping the first electrode, and a first active layer disposed on the first and second electrodes. The second transistor includes third and fourth electrodes which are disposed to space apart from, and on a same layer as, the second electrode, and between which the open area is disposed, and a second active layer disposed on the third and fourth electrodes and across the open area.

    Display device comprising thin film transistors and method for manufacturing the same
    2.
    发明授权
    Display device comprising thin film transistors and method for manufacturing the same 有权

    公开(公告)号：US11678518B2

    公开(公告)日：2023-06-13

    申请号：US17344903

    申请日：2021-06-10

    Applicant: LG Display Co., Ltd.

    Inventor： JungSeok Seo ,  PilSang Yun ,  SeHee Park ,  Jiyong Noh

    IPC: H10K59/121 ,  H10K59/131 ,  H01L27/12 ,  H10K59/12 ,  H01L27/32

    CPC classification number: H01L27/3262 ,  H01L27/124 ,  H01L27/127 ,  H01L27/1262 ,  H01L27/3276 ,  H01L2227/323

    Abstract: A display device includes a substrate, a pixel driver on the substrate, and a display element connected to the pixel driver. The pixel driver includes a conductive layer on the substrate, a buffer layer on the conductive layer, a semiconductor layer on the buffer layer, a gate electrode, the gate electrode overlapping the semiconductor layer, and a source electrode and a drain electrode connected to the semiconductor layer. The buffer layer includes a flattened portion overlapping the conductive layer, and a stepped portion overlapping the periphery of the conductive layer. The semiconductor layer includes a first oxide semiconductor layer on the buffer layer, and a second oxide semiconductor layer on the first oxide semiconductor layer. A width of the first oxide semiconductor layer is larger than a width of the second oxide semiconductor layer, and the first oxide semiconductor layer is on the stepped portion of the buffer layer.

    Transistor and electronic device
    8.
    发明授权
    Transistor and electronic device 有权

    公开(公告)号：US11476281B2

    公开(公告)日：2022-10-18

    申请号：US16521906

    申请日：2019-07-25

    Applicant: LG Display Co., Ltd.

    Inventor： SeHee Park ,  JungSeok Seo ,  Jaeyoon Park ,  PilSang Yun ,  Jiyong Noh

    IPC: H01L27/12 ,  H01L29/22

    Abstract: An electronic device comprises a panel, a driving circuit configured to drive the panel, and a transistor disposed in the panel. The transistor includes a first insulation film on a substrate, an active layer disposed on the first insulation film, a second insulation film disposed on the active layer and the first insulation film to cover the active layer, the second insulation film having a thickness smaller than a thickness of the first insulation film, a source electrode disposed on the second insulation film and spaced apart from the active layer by the second insulation film, the source electrode overlapping an end of the active layer, and a drain electrode disposed on the second insulation film and spaced apart from the active layer by the second insulation film, the drain electrode overlapping another end of the active layer.

    Panel, transistor and electronic device
    9.
    发明授权
    Panel, transistor and electronic device 有权

    公开(公告)号：US10777772B2

    公开(公告)日：2020-09-15

    申请号：US16668262

    申请日：2019-10-30

    Applicant: LG Display Co., Ltd.

    Inventor： Jiyong Noh ,  PilSang Yun ,  SeHee Park ,  JungSeok Seo

    IPC: H01L51/52 ,  H01L27/12 ,  H01L27/32

    Abstract: A panel comprises a substrate, a semiconductor layer on the substrate, and including an oxide semiconductor or a low-temperature polycrystalline silicon, an interlayer insulating film on the substrate and the semiconductor layer, a passivation layer on the interlayer insulating film, an overcoat layer on the passivation layer, a light emitting layer on the overcoat layer, and an encapsulation layer on the light emitting layer. The encapsulation layer includes an auxiliary encapsulation layer having at least one of a silicon nitride (SiNx:H) layer including hydrogen, a silicon oxide (SiO2:H) layer including hydrogen, or a silicon oxynitride (SiON:H) layer including hydrogen. At least one of the interlayer insulating film, the passivation layer, or the overcoat layer is a hydrogen trapping layer.

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