Invention Grant
- Patent Title: Semiconductor storage device and controlling method thereof
-
Application No.: US17350382Application Date: 2021-06-17
-
Publication No.: US11501811B2Publication Date: 2022-11-15
- Inventor: Kosuke Hatsuda
- Applicant: Kioxia Corporation
- Applicant Address: JP Tokyo
- Assignee: Kioxia Corporation
- Current Assignee: Kioxia Corporation
- Current Assignee Address: JP Tokyo
- Agency: Holtz, Holtz & Volek PC
- Priority: JPJP2020-157775 20200918
- Main IPC: G11C11/16
- IPC: G11C11/16 ; G11C7/10

Abstract:
In a memory, a first node holds first data from a first cell. A second node holds second data from a second cell near the first cell. A differential circuit includes a first current path passing a first current corresponding to a voltage of the first node and a second current path passing a second current corresponding to a voltage of the second node, and outputs an output signal corresponding to a voltage difference between the first and the second nodes from an output part. A first register latches the output signal and output the signal as a hold signal. A first offset part is connected to the first current path and offsets the first current when the hold signal has a first logic level. A second offset part is connected to the second current path and offsets the second current when the hold signal has a second logic level.
Public/Granted literature
- US20220093148A1 SEMICONDUCTOR STORAGE DEVICE AND CONTROLLING METHOD THEREOF Public/Granted day:2022-03-24
Information query