Invention Grant
- Patent Title: Memory device and method with stabilization of selector devices in strings in a memory array of the memory device
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Application No.: US16991535Application Date: 2020-08-12
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Publication No.: US11501842B2Publication Date: 2022-11-15
- Inventor: Avinash Rajagiri , Shinji Sato
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Schwegman Lundberg & Woessner, P.A.
- Main IPC: G11C16/14
- IPC: G11C16/14 ; G11C16/34 ; G11C16/04 ; G11C16/28

Abstract:
A variety of applications can include memory devices designed to provide stabilization of selector devices in a memory array of the memory device. A selector stabilizer pulse can be applied to a selector device of a string of the memory array and to a memory cell of multiple memory cells of the string with the memory cell being adjacent to the selector device in the string. The selector stabilizer pulse can be applied directly following an erase operation to the string to stabilize the threshold voltage of the selector device. The selector stabilizer pulse can be applied as part of the erase algorithm of the memory device. Additional devices, systems, and methods are discussed.
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