- 专利标题: Integration of stress decoupling and particle filter on a single wafer or in combination with a waferlevel package
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申请号: US17076250申请日: 2020-10-21
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公开(公告)号: US11505450B2公开(公告)日: 2022-11-22
- 发明人: Florian Brandl , Christian Geissler , Robert Gruenberger , Claus Waechter , Bernhard Winkler
- 申请人: Infineon Technologies AG
- 申请人地址: DE Neubiberg
- 专利权人: Infineon Technologies AG
- 当前专利权人: Infineon Technologies AG
- 当前专利权人地址: DE Neubiberg
- 代理机构: Harrity & Harrity, LLP
- 主分类号: B81B7/00
- IPC分类号: B81B7/00 ; B81C1/00 ; G01L1/18 ; G01L1/14
摘要:
A semiconductor device and a method of manufacturing the same are provided. The semiconductor device includes a substrate having a first surface and a second surface arranged opposite to the first surface; a stress-sensitive sensor disposed at the first surface of the substrate, where the stress-sensitive sensor is sensitive to mechanical stress; a stress-decoupling trench that has a vertical extension that extends from the first surface into the substrate, where the stress-decoupling trench vertically extends partially into the substrate towards the second surface although not completely to the second surface; and a plurality of particle filter trenches that vertically extend from the second surface into the substrate, wherein each of the plurality of particle filter trenches have a longitudinal extension that extends orthogonal to the vertical extension of the stress-decoupling trench.