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公开(公告)号：US10807862B1
公开(公告)日：2020-10-20
申请号：US16373938
申请日：2019-04-03
IPC分类号： H01L41/053 , B81B7/00
摘要： A semiconductor device and a method of manufacturing the same are provided. The semiconductor device includes a semiconductor chip including a substrate having a first surface and a second surface arranged opposite to the first surface; a stress-sensitive sensor disposed at the first surface of the substrate, wherein the stress-sensitive sensor is sensitive to mechanical stress; a first pair of adjacent stress-decoupling trenches arranged laterally from a first lateral side of the stress-sensitive sensor, where each stress-decoupling trench of the first pair of adjacent stress-decoupling trenches extends partially from the first surface into the substrate towards the second surface although not completely to the second surface; and a first spring structure formed between the first pair of adjacent stress-decoupling trenches such that the first spring structure is arranged laterally from the stress-sensitive sensor and is configured to absorb external stress from an environment.
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公开(公告)号：US10370244B2
公开(公告)日：2019-08-06
申请号：US15827057
申请日：2017-11-30
发明人： Florian Brandl , Manfred Fries , Franz-Peter Kalz
摘要： A semiconductor device and a method of manufacturing the same are provided such that a microelectromechanical systems (MEMS) element is protected at an early manufacturing stage. A method for protecting a MEMS element includes: providing at least one MEMS element, having a sensitive area, on a substrate; and depositing, prior to a package assembly process, a protective material over the sensitive area of the at least one MEMS element such that the sensitive area of at least one MEMS element is sealed from an external environment, where the protective material permits a sensor functionality of the at least one MEMS element.
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公开(公告)号：US11247895B2
公开(公告)日：2022-02-15
申请号：US16929376
申请日：2020-07-15
IPC分类号： H01L41/053 , B81B7/00
摘要： A semiconductor device includes a first region; a second region that is peripheral to the first region; a substrate having a first surface and a second surface arranged opposite to the first surface; a stress-sensitive sensor disposed in the first region at the first surface of the substrate; a back end of line (BEOL) stack disposed on the first surface of the semiconductor chip that extends laterally from the MEMS element, in the first region, into the second region; a first cavity formed in the BEOL stack that exposes the sensitive area of the stress-sensitive sensor, wherein the first cavity extends entirely through the BEOL stack over the first region thereby exposing a sensitive area of the stress-sensitive sensor; and at least one stress-decoupling trench laterally spaced from the stress-sensitive sensor and laterally spaced from the first cavity with a portion of the BEOL stack interposed between.
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公开(公告)号：US20230059356A1
公开(公告)日：2023-02-23
申请号：US17818988
申请日：2022-08-11
发明人： Dirk Meinhold , Florian Brandl
IPC分类号： G01M3/04
摘要： A differential gas sensor includes a first sensor component to selectively detect a first gas present in the environment and to supply a first output signal, a second sensor component configured to supply a second output signal, and a circuit configured to determine a difference between the first output signal and the second output signal.
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公开(公告)号：US11505450B2
公开(公告)日：2022-11-22
申请号：US17076250
申请日：2020-10-21
摘要： A semiconductor device and a method of manufacturing the same are provided. The semiconductor device includes a substrate having a first surface and a second surface arranged opposite to the first surface; a stress-sensitive sensor disposed at the first surface of the substrate, where the stress-sensitive sensor is sensitive to mechanical stress; a stress-decoupling trench that has a vertical extension that extends from the first surface into the substrate, where the stress-decoupling trench vertically extends partially into the substrate towards the second surface although not completely to the second surface; and a plurality of particle filter trenches that vertically extend from the second surface into the substrate, wherein each of the plurality of particle filter trenches have a longitudinal extension that extends orthogonal to the vertical extension of the stress-decoupling trench.
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公开(公告)号：US10858245B2
公开(公告)日：2020-12-08
申请号：US16447036
申请日：2019-06-20
发明人： Florian Brandl , Manfred Fries , Franz-Peter Kalz
摘要： A semiconductor device and a method of manufacturing the same are provided such that a microelectromechanical systems (MEMS) element is protected at an early manufacturing stage. A method for protecting a MEMS element includes: providing at least one MEMS element, having a sensitive area, on a substrate; and depositing, prior to a package assembly process, a protective material over the sensitive area of the at least one MEMS element such that the sensitive area of at least one MEMS element is sealed from an external environment, where the protective material permits a sensor functionality of the at least one MEMS element.
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公开(公告)号：US10996125B2
公开(公告)日：2021-05-04
申请号：US15976111
申请日：2018-05-10
摘要： A pressure sensor is provided. The pressure sensor includes at least two electrodes and an integrated circuit configured to sense a capacitance between the at least two electrodes. Further, the pressure sensor includes a Microelectromechanical System (MEMS) structure including a conductive or dielectric membrane configured to move, depending on the pressure, relative to the at least two electrodes.
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公开(公告)号：US10899604B2
公开(公告)日：2021-01-26
申请号：US16387918
申请日：2019-04-18
摘要： A semiconductor device and a method of manufacturing the same are provided. The semiconductor device includes a substrate having a first surface and a second surface arranged opposite to the first surface; a stress-sensitive sensor disposed at the first surface of the substrate, where the stress-sensitive sensor is sensitive to mechanical stress; a stress-decoupling trench that has a vertical extension that extends from the first surface into the substrate, where the stress-decoupling trench vertically extends partially into the substrate towards the second surface although not completely to the second surface; and a plurality of particle filter trenches that vertically extend from the second surface into the substrate, wherein each of the plurality of particle filter trenches have a longitudinal extension that extends orthogonal to the vertical extension of the stress-decoupling trench.
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