Invention Grant
- Patent Title: Packages with thick RDLs and thin RDLs stacked alternatingly
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Application No.: US16909517Application Date: 2020-06-23
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Publication No.: US11508665B2Publication Date: 2022-11-22
- Inventor: Po-Yuan Teng , Kuo Lung Pan , Yu-Chia Lai , Tin-Hao Kuo , Hao-Yi Tsai , Chen-Hua Yu
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Slater Matsil, LLP
- Main IPC: H01L23/538
- IPC: H01L23/538 ; H01L23/00 ; H01L23/552 ; H01L21/48

Abstract:
A method includes forming a plurality of dielectric layers, which processes include forming a first plurality of dielectric layers having first thicknesses, and forming a second plurality of dielectric layers having second thicknesses smaller than the first thicknesses. The first plurality of dielectric layers and the second plurality of dielectric layers are laid out alternatingly. The method further includes forming a plurality of redistribution lines connected to form a conductive path, which processes include forming a first plurality of redistribution lines, each being in one of the first plurality of dielectric layers, and forming a second plurality of redistribution lines, each being in one of the second plurality of dielectric layers.
Public/Granted literature
- US20210398905A1 Packages with Thick RDLs and Thin RDLs Stacked Alternatingly Public/Granted day:2021-12-23
Information query
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