Invention Grant
- Patent Title: Method for manufacturing insulating layer for semiconductor package and insulating layer for semiconductor package using the same
-
Application No.: US16767872Application Date: 2018-12-12
-
Publication No.: US11515245B2Publication Date: 2022-11-29
- Inventor: Minsu Jeong , You Jin Kyung , Byung Ju Choi , Woo Jae Jeong , Kwang Joo Lee , Eunbyurl Cho
- Applicant: LG CHEM, LTD.
- Applicant Address: KR Seoul
- Assignee: LG CHEM, LTD.
- Current Assignee: LG CHEM, LTD.
- Current Assignee Address: KR Seoul
- Agency: Rothwell, Figg, Ernst & Manbeck, P.C.
- Priority: KR10-2018-0003579 20180110
- International Application: PCT/KR2018/016351 WO 20181212
- International Announcement: WO2019/139274 WO 20190718
- Main IPC: H01L23/498
- IPC: H01L23/498 ; B29C65/02
Abstract:
The present invention relates to a method for manufacturing an insulating layer for a semiconductor package which can improve reliability and have excellent heat resistance by removing pores generated in the insulating layer during manufacture of an insulating layer for a semiconductor package using magnetic characteristics, and an insulating layer for a semiconductor package obtained using the method for manufacturing the insulating layer for a semiconductor package.
Information query
IPC分类:
