Invention Grant
- Patent Title: Memory device with on-chip sacrificial memory cells
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Application No.: US17139059Application Date: 2020-12-31
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Publication No.: US11521680B2Publication Date: 2022-12-06
- Inventor: Fernando Garcia Redondo , Mudit Bhargava , Pranay Prabhat , Supreet Jeloka
- Applicant: Arm Limited
- Applicant Address: GB Cambridge
- Assignee: Arm Limited
- Current Assignee: Arm Limited
- Current Assignee Address: GB Cambridge
- Agency: Leveque Intellectual Property Law, P.C.
- Main IPC: G11C11/00
- IPC: G11C11/00 ; G11C13/00 ; G11C11/16

Abstract:
An integrated circuit includes a primary memory array with cells switchable between first and second states. The circuit also includes sacrificial memory cells; each fabricated to be switchable between the first and second states and associated with at least one row of the primary array. A controller is configured to detect a write operation to a row of the primary array, stress a sacrificial cell associated with the row and detect a failure of the associated sacrificial cell. The sacrificial cells are fabricated to have lower write-cycle endurance than cells of the primary array or are subjected to more stress. Failure of a row of the primary array is predicted based, at least in part, on a detected failure of the associated sacrificial cell.
Public/Granted literature
- US20220208265A1 MEMORY DEVICE WITH ON-CHIP SACRIFICIAL MEMORY CELLS Public/Granted day:2022-06-30
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