Invention Grant
- Patent Title: In-situ deposition process
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Application No.: US16391219Application Date: 2019-04-22
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Publication No.: US11521849B2Publication Date: 2022-12-06
- Inventor: Sang Wook Park , Sunil Srinivasan , Rajinder Dhindsa , Jonathan Sungehul Kim , Lin Yu , Zhonghua Yao , Olivier Luere
- Applicant: Applied Materials, Inc.
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Patterson + Sheridan, LLP
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L21/033 ; C23C16/455 ; C23C16/40 ; C23C16/34

Abstract:
Embodiments of the present disclosure provide methods and apparatus for forming a desired material layer on a substrate between, during, prior to or after a patterning process. In one embodiment, a method for forming a material layer on a substrate includes pulsing a first gas precursor onto a surface of a substrate, attaching a first element from the first gas precursor onto the surface of the substrate, maintaining a substrate temperature less than about 110 degrees Celsius, pulsing a second gas precursor onto the surface of the substrate, and attaching a second element from the second gas precursor to the first element on the surface of the substrate.
Public/Granted literature
- US20200027717A1 IN-SITU DEPOSITION PROCESS Public/Granted day:2020-01-23
Information query
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