- 专利标题: Isolation circuit between power domains
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申请号: US17115436申请日: 2020-12-08
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公开(公告)号: US11526647B2公开(公告)日: 2022-12-13
- 发明人: Chi-Yu Lu , Ting-Wei Chiang , Hui-Zhong Zhuang , Jerry Chang Jui Kao , Pin-Dai Sue , Jiun-Jia Huang , Yu-Ti Su , Wei-Hsiang Ma
- 申请人: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 申请人地址: TW Hsinchu
- 专利权人: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人地址: TW Hsinchu
- 代理机构: Hauptman Ham, LLP
- 主分类号: G06F30/394
- IPC分类号: G06F30/394 ; G03F1/70 ; G03F1/36 ; G06F30/398
摘要:
An integrated circuit includes a first type-one transistor, a second type-one transistor, a first type-two transistor, a second type-two transistor, a third type-one transistor, a fourth type-one transistor, and a fifth type-one transistor. The first type-one transistor has a gate configured to have a first supply voltage of a first power supply. The first type-two transistor has a gate configured to have a second supply voltage of the first power supply. The first active-region of the third type-one transistor is connected with an active-region of the first type-one transistor. The second active-region and the gate of the third type-one transistor are connected together. The first active-region of the fifth type-one transistor is connected with the gate of the third type-one transistor. The second active-region of the fifth type-one transistor is configured to have a first supply voltage of a second power supply.
公开/授权文献
- US20210089700A1 ISOLATION CIRCUIT BETWEEN POWER DOMAINS 公开/授权日:2021-03-25
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