A memory is provided that is configured to practice both a conventional normal read operation and also a burst mode read operation. During the normal read operation, the memory pre-charges the bit lines in a group of multiplexed columns. Each column has a sense amplifier that latches a bit decision for the column during the normal read operation. If a subsequent read operation addresses the same group of multiplexed columns, the memory invokes the burst-mode read operation during which the bit lines are not pre-charged.