Invention Grant
- Patent Title: Semiconductor device and manufacturing method thereof
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Application No.: US16965052Application Date: 2019-02-18
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Publication No.: US11527657B2Publication Date: 2022-12-13
- Inventor: Yuki Hata , Katsuaki Tochibayashi , Junpei Sugao , Shunpei Yamazaki
- Applicant: Semiconductor Energy Laboratory Co., Ltd.
- Applicant Address: JP Atsugi
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Atsugi
- Agency: Robinson Intellectual Property Law Office
- Agent Eric J. Robinson
- Priority: JPJP2018-035554 20180228
- International Application: PCT/IB2019/051278 WO 20190218
- International Announcement: WO2019/166906 WO 20190906
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/786 ; H01L21/3115 ; H01L27/108
Abstract:
A semiconductor device with a high on-state current is provided. The semiconductor device includes a first oxide, a second oxide over the first oxide, a third oxide over the second oxide, a first insulator over the third oxide, a conductor over the first insulator, a second insulator in contact with the second oxide and the third oxide, and a third insulator over the second insulator; the second oxide includes first region to fifth regions; the resistance of the first region and the resistance of the second region are lower than the resistance of the third region; the resistance of the fourth region and the resistance of the fifth region are lower than the resistance of the third region and higher than the resistance of the first region and the resistance of the second region; and the conductor is provided over the third region, the fourth region, and the fifth region to overlap with the third region, the fourth region, and the fifth region.
Information query
IPC分类:
