Invention Grant
- Patent Title: Method of making ohmic contact on low doped bulk silicon for optical alignment
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Application No.: US16950169Application Date: 2020-11-17
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Publication No.: US11530130B2Publication Date: 2022-12-20
- Inventor: Kuei-Sung Chang , Chia-Hua Chu , Shang-Ying Tsai
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Eschweiler & Potashnik, LLC
- Main IPC: B81C1/00
- IPC: B81C1/00 ; B81B7/00
Abstract:
Various embodiments of the present disclosure are directed towards a method for forming a microelectromechanical systems (MEMS) structure including an epitaxial layer overlying a MEMS substrate. The method includes bonding a MEMS substrate to a carrier substrate. The epitaxial layer is formed over the MEMS substrate, where the epitaxial layer has a higher doping concentration than the MEMS substrate. A plurality of contacts is formed over the epitaxial layer.
Public/Granted literature
- US20210070611A1 METHOD OF MAKING OHMIC CONTACT ON LOW DOPED BULK SILICON FOR OPTICAL ALIGNMENT Public/Granted day:2021-03-11
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