Invention Grant
- Patent Title: Mask blanks and methods for depositing layers on mask blank
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Application No.: US17083348Application Date: 2020-10-29
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Publication No.: US11531262B2Publication Date: 2022-12-20
- Inventor: Hsin-Chang Lee , Pei-Cheng Hsu , Ta-Cheng Lien , Wen-Chang Hsueh
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee Address: TW Hsinchu
- Agency: McDermott Will & Emery LLP
- Main IPC: G03F1/24
- IPC: G03F1/24 ; G03F1/54 ; G03F1/48

Abstract:
A reflective mask blank includes a substrate, a reflective multilayer (RML) disposed on the substrate, a capping layer disposed on the reflective multilayer, and an absorber layer disposed on the capping layer. The absorber layer has length or width dimensions smaller than the capping layer, and part of the capping layer is exposed by the absorber layer. The dimension of the absorber layer and the hard mask layer ranges between 146 cm to 148 cm. The dimensions of the substrate, the RML, and the capping layer range between 150 cm to 152 cm.
Public/Granted literature
- US20210200078A1 MASK BLANKS AND METHODS FOR DEPOSITING LAYERS ON MASK BLANK Public/Granted day:2021-07-01
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