Managing programming convergence associated with memory cells of a memory sub-system
Abstract:
A first programming pulse is caused to be applied to a wordline associated with a memory cell of the memory sub-system. In response to first programming pulse, causing a program verify operation to be performed to determine a measured threshold voltage associated with the memory cell. The measured threshold voltage associated with the memory cell is stored in a sensing node. A determination is made that the measured threshold voltage of the memory cell satisfies a condition and the measured threshold voltage stored in the sensing node is identified. A bitline voltage matching the measured threshold voltage is caused to be applied to a bitline associated with the memory cell.
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